Simulation of Power Electronics

The parameters of the block IGBT are the inner resistance Ron, the inductance Lon, and the threshold voltage Vf. IGBT turns on when the voltage collector-emitter Uke > Vf and the control (gate) signal g > 0, and it turns off when Uke > 0 and g = 0 and is in turning-off state when Uke < 0...

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Bibliographische Detailangaben
1. Verfasser: Perelmuter, Viktor
Format: Buchkapitel
Sprache:eng
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Zusammenfassung:The parameters of the block IGBT are the inner resistance Ron, the inductance Lon, and the threshold voltage Vf. IGBT turns on when the voltage collector-emitter Uke > Vf and the control (gate) signal g > 0, and it turns off when Uke > 0 and g = 0 and is in turning-off state when Uke < 0. An antiparallel diode has to be used in order to make a path for the current in the last case, how it is made in the block IGBT/Diode. The block models the process turning-off: current decreasing from Imax to 0.1 Imax for the fall time Tf and further to zero for tail time Tt.
DOI:10.1201/9781315316246-10