An analytical method for determining intrinsic drainsource resistance of lightly doped drain (LDD) devices
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| Veröffentlicht in: | Solid-state electronics 1984, Vol.27 (1), p.89-96 |
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| Sprache: | eng |
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| container_end_page | 96 |
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| container_issue | 1 |
| container_start_page | 89 |
| container_title | Solid-state electronics |
| container_volume | 27 |
| creator | CHARVAKA DUVUURY BAGLEE, D DUANE, M HYSLOP, A SMAYLING, M MAEKAWA, M |
| description | |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0038-1101 |
| ispartof | Solid-state electronics, 1984, Vol.27 (1), p.89-96 |
| issn | 0038-1101 1879-2405 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_9592943 |
| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Compound structure devices Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | An analytical method for determining intrinsic drainsource resistance of lightly doped drain (LDD) devices |
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