Annealing behaviour of oxygen-induced recombination centres in silicon

Studies are made of the process in which recombination effective oxygen‐induced centres are created in silicon by heat treatment at 450°C and then are caused to disappear on annealing various times at higher temperatures (up to T = 600°C). An analysis of the above mentioned oxygen‐induced centre concentration in dependence on the oxygen content, temperature, and time of silicon annealing allows to find (at various temperatures) the characteristics of the process involved, namely: the solubility of recombination efficient oxygen‐related centres, their structure, and reaction constants for their disappearance and formation. The theoretical annealing kinetics of the species studied, based on an oxygen out‐diffusion from the centres involved, agree favorably with existing experimental observations. [Russian Text Ignored.]