Bulk-barrier transistor

Experimental and theoretical results are presented on a bulk-barrier transistor (BBT). In this device the charge-carrier transportation is determined by an energy barrier, which is located inside a semiconductor. The barrier is the result of a space-charge region in a three-layered n-p-n or p-n-p st...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 1983-10, Vol.30 (10), p.1380-1386
Hauptverfasser:	Mader, H., Muller, R., Beinvogl, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	1386
container_issue	10
container_start_page	1380
container_title	IEEE transactions on electron devices
container_volume	30
creator	Mader, H. Muller, R. Beinvogl, W.
description	Experimental and theoretical results are presented on a bulk-barrier transistor (BBT). In this device the charge-carrier transportation is determined by an energy barrier, which is located inside a semiconductor. The barrier is the result of a space-charge region in a three-layered n-p-n or p-n-p structure with a very thin middle layer. The height of the energy barrier, which is adjustable by technological parameters, can be controlled by an external voltage.
doi_str_mv	10.1109/T-ED.1983.21303
format	Article
fullrecord	<record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_pascalfrancis_primary_9525355</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1483204</ieee_id><sourcerecordid>28159303</sourcerecordid><originalsourceid>FETCH-LOGICAL-c412t-b6e7e9d2df2e875dd22a9cbdc11a97b17728712241d7cbae524cfe81d535fcfa3</originalsourceid><addsrcrecordid>eNqNkEtPAjEUhRujiYiuWbhxYdwVevuYtksFfCQkbnDddPpIRgcG22Hhv7cI0aWsbm7ynZOcD6ERkDEA0ZMlns_GoBUbU2CEnaABCCGxrnh1igaEgMKaKXaOLnJ-L2_FOR2g0cO2_cC1TakJ6aZPdp2b3HfpEp1F2-ZwdbhD9PY4X06f8eL16WV6v8COA-1xXQUZtKc-0qCk8J5Sq13tHYDVsgYpqZJAKQcvXW2DoNzFoMALJqKLlg3R3b53k7rPbci9WTXZhba169Bts6FKKc0JOQIEocvu_0EGwFV1FEhEpXQBJ3vQpS7nFKLZpGZl05cBYnbuzdLMZ2bn3vy4L4nbQ7XNzraxaHVN_o1pQct-UbDrPdaEEP5KuWKUcPYNwoqKhw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>23105689</pqid></control><display><type>article</type><title>Bulk-barrier transistor</title><source>IEEE Electronic Library (IEL)</source><creator>Mader, H. ; Muller, R. ; Beinvogl, W.</creator><creatorcontrib>Mader, H. ; Muller, R. ; Beinvogl, W.</creatorcontrib><description>Experimental and theoretical results are presented on a bulk-barrier transistor (BBT). In this device the charge-carrier transportation is determined by an energy barrier, which is located inside a semiconductor. The barrier is the result of a space-charge region in a three-layered n-p-n or p-n-p structure with a very thin middle layer. The height of the energy barrier, which is adjustable by technological parameters, can be controlled by an external voltage.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1983.21303</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE transactions on electron devices, 1983-10, Vol.30 (10), p.1380-1386</ispartof><rights>1984 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c412t-b6e7e9d2df2e875dd22a9cbdc11a97b17728712241d7cbae524cfe81d535fcfa3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1483204$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1483204$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=9525355$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Mader, H.</creatorcontrib><creatorcontrib>Muller, R.</creatorcontrib><creatorcontrib>Beinvogl, W.</creatorcontrib><title>Bulk-barrier transistor</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Experimental and theoretical results are presented on a bulk-barrier transistor (BBT). In this device the charge-carrier transportation is determined by an energy barrier, which is located inside a semiconductor. The barrier is the result of a space-charge region in a three-layered n-p-n or p-n-p structure with a very thin middle layer. The height of the energy barrier, which is adjustable by technological parameters, can be controlled by an external voltage.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1983</creationdate><recordtype>article</recordtype><recordid>eNqNkEtPAjEUhRujiYiuWbhxYdwVevuYtksFfCQkbnDddPpIRgcG22Hhv7cI0aWsbm7ynZOcD6ERkDEA0ZMlns_GoBUbU2CEnaABCCGxrnh1igaEgMKaKXaOLnJ-L2_FOR2g0cO2_cC1TakJ6aZPdp2b3HfpEp1F2-ZwdbhD9PY4X06f8eL16WV6v8COA-1xXQUZtKc-0qCk8J5Sq13tHYDVsgYpqZJAKQcvXW2DoNzFoMALJqKLlg3R3b53k7rPbci9WTXZhba169Bts6FKKc0JOQIEocvu_0EGwFV1FEhEpXQBJ3vQpS7nFKLZpGZl05cBYnbuzdLMZ2bn3vy4L4nbQ7XNzraxaHVN_o1pQct-UbDrPdaEEP5KuWKUcPYNwoqKhw</recordid><startdate>19831001</startdate><enddate>19831001</enddate><creator>Mader, H.</creator><creator>Muller, R.</creator><creator>Beinvogl, W.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>19831001</creationdate><title>Bulk-barrier transistor</title><author>Mader, H. ; Muller, R. ; Beinvogl, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c412t-b6e7e9d2df2e875dd22a9cbdc11a97b17728712241d7cbae524cfe81d535fcfa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1983</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mader, H.</creatorcontrib><creatorcontrib>Muller, R.</creatorcontrib><creatorcontrib>Beinvogl, W.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mader, H.</au><au>Muller, R.</au><au>Beinvogl, W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bulk-barrier transistor</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1983-10-01</date><risdate>1983</risdate><volume>30</volume><issue>10</issue><spage>1380</spage><epage>1386</epage><pages>1380-1386</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Experimental and theoretical results are presented on a bulk-barrier transistor (BBT). In this device the charge-carrier transportation is determined by an energy barrier, which is located inside a semiconductor. The barrier is the result of a space-charge region in a three-layered n-p-n or p-n-p structure with a very thin middle layer. The height of the energy barrier, which is adjustable by technological parameters, can be controlled by an external voltage.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/T-ED.1983.21303</doi><tpages>7</tpages></addata></record>
fulltext	fulltext_linktorsrc
identifier	ISSN: 0018-9383
ispartof	IEEE transactions on electron devices, 1983-10, Vol.30 (10), p.1380-1386
issn	0018-9383 1557-9646
language	eng
recordid	cdi_pascalfrancis_primary_9525355
source	IEEE Electronic Library (IEL)
subjects	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	Bulk-barrier transistor
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T02%3A10%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Bulk-barrier%20transistor&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Mader,%20H.&rft.date=1983-10-01&rft.volume=30&rft.issue=10&rft.spage=1380&rft.epage=1386&rft.pages=1380-1386&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/T-ED.1983.21303&rft_dat=%3Cproquest_RIE%3E28159303%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=23105689&rft_id=info:pmid/&rft_ieee_id=1483204&rfr_iscdi=true