Bulk-barrier transistor

Experimental and theoretical results are presented on a bulk-barrier transistor (BBT). In this device the charge-carrier transportation is determined by an energy barrier, which is located inside a semiconductor. The barrier is the result of a space-charge region in a three-layered n-p-n or p-n-p st...

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Veröffentlicht in:	IEEE transactions on electron devices 1983-10, Vol.30 (10), p.1380-1386
Hauptverfasser:	Mader, H., Muller, R., Beinvogl, W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Beschreibung
Zusammenfassung:	Experimental and theoretical results are presented on a bulk-barrier transistor (BBT). In this device the charge-carrier transportation is determined by an energy barrier, which is located inside a semiconductor. The barrier is the result of a space-charge region in a three-layered n-p-n or p-n-p structure with a very thin middle layer. The height of the energy barrier, which is adjustable by technological parameters, can be controlled by an external voltage.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/T-ED.1983.21303