Streamer Discharges in Semiconductors

Excitation conditions, influence of temperature on crystallographic discharge orientation, mechanism of discharge optical quenching, and stimulation and optical streamer properties are investigated in the temperature range of 4.2 to 530 K in II–VI compounds. The primary directions of discharge propa...

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1983-06, Vol.77 (2), p.765-774
Hauptverfasser: Gribkovskii, V. P., Gladyshchuk, A. A., Zubritskii, V. V., Parashchuk, V. V., Yablonskii, G. P.
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container_issue 2
container_start_page 765
container_title Physica status solidi. A, Applied research
container_volume 77
creator Gribkovskii, V. P.
Gladyshchuk, A. A.
Zubritskii, V. V.
Parashchuk, V. V.
Yablonskii, G. P.
description Excitation conditions, influence of temperature on crystallographic discharge orientation, mechanism of discharge optical quenching, and stimulation and optical streamer properties are investigated in the temperature range of 4.2 to 530 K in II–VI compounds. The primary directions of discharge propagation is established to change with increasing temperature. Streamer light emission is shown to have a mechanism of recombination analogous to photoluminescence at laser excitation at T = 4.2, 77, and 294 to 500 K. [Russian Text Ignored.]
doi_str_mv 10.1002/pssa.2210770245
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1521-396X
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric breakdown and space-charge effects
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Physics
title Streamer Discharges in Semiconductors
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