Streamer Discharges in Semiconductors
Excitation conditions, influence of temperature on crystallographic discharge orientation, mechanism of discharge optical quenching, and stimulation and optical streamer properties are investigated in the temperature range of 4.2 to 530 K in II–VI compounds. The primary directions of discharge propa...
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Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1983-06, Vol.77 (2), p.765-774 |
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container_title | Physica status solidi. A, Applied research |
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creator | Gribkovskii, V. P. Gladyshchuk, A. A. Zubritskii, V. V. Parashchuk, V. V. Yablonskii, G. P. |
description | Excitation conditions, influence of temperature on crystallographic discharge orientation, mechanism of discharge optical quenching, and stimulation and optical streamer properties are investigated in the temperature range of 4.2 to 530 K in II–VI compounds. The primary directions of discharge propagation is established to change with increasing temperature. Streamer light emission is shown to have a mechanism of recombination analogous to photoluminescence at laser excitation at T = 4.2, 77, and 294 to 500 K.
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doi_str_mv | 10.1002/pssa.2210770245 |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectric breakdown and space-charge effects Dielectric properties of solids and liquids Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Physics |
title | Streamer Discharges in Semiconductors |
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