Streamer Discharges in Semiconductors

Excitation conditions, influence of temperature on crystallographic discharge orientation, mechanism of discharge optical quenching, and stimulation and optical streamer properties are investigated in the temperature range of 4.2 to 530 K in II–VI compounds. The primary directions of discharge propa...

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1983-06, Vol.77 (2), p.765-774
Hauptverfasser: Gribkovskii, V. P., Gladyshchuk, A. A., Zubritskii, V. V., Parashchuk, V. V., Yablonskii, G. P.
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Sprache:eng
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Zusammenfassung:Excitation conditions, influence of temperature on crystallographic discharge orientation, mechanism of discharge optical quenching, and stimulation and optical streamer properties are investigated in the temperature range of 4.2 to 530 K in II–VI compounds. The primary directions of discharge propagation is established to change with increasing temperature. Streamer light emission is shown to have a mechanism of recombination analogous to photoluminescence at laser excitation at T = 4.2, 77, and 294 to 500 K. [Russian Text Ignored.]
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.2210770245