Streamer Discharges in Semiconductors
Excitation conditions, influence of temperature on crystallographic discharge orientation, mechanism of discharge optical quenching, and stimulation and optical streamer properties are investigated in the temperature range of 4.2 to 530 K in II–VI compounds. The primary directions of discharge propa...
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Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1983-06, Vol.77 (2), p.765-774 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Excitation conditions, influence of temperature on crystallographic discharge orientation, mechanism of discharge optical quenching, and stimulation and optical streamer properties are investigated in the temperature range of 4.2 to 530 K in II–VI compounds. The primary directions of discharge propagation is established to change with increasing temperature. Streamer light emission is shown to have a mechanism of recombination analogous to photoluminescence at laser excitation at T = 4.2, 77, and 294 to 500 K.
[Russian Text Ignored.] |
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ISSN: | 0031-8965 1521-396X |
DOI: | 10.1002/pssa.2210770245 |