Temperature Dependence of Electroluminescence in CdF2 Thin Films Doped with Rare Earth

The dependence of electroluminescence brightness on temperature and applied voltage is studied in CdF2 thin films doped with Eu3+, Er3+, and Sm3+ ions. Experimental results are fitted to the dependence on temperature and field strength of the rate of electron tunneling from discrete centre to band as computed according to the recent phonon‐assisted tunneling theory. Satisfactory agreement of experimental data with theory is observed. It is concluded that the processes of free carrier generation by an electric field play a decisive role in these dependences. [Russian Text Ignored.]