Gain measurements on semiconductor lasers by optical feedback from an external grating cavity

We report on new methods to determine the curvature around maximum of the mode gain curve of homogeneously line-broadened semiconductor lasers, either by measuring the wavelength dependence of threshold current of the laser coupled to an external grating cavity or by measuring the tuning range of th...

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Veröffentlicht in:	IEEE J. Quant. Electron.; (United States) 1983-08, Vol.19 (8), p.1238-1242
Hauptverfasser:	Gade, N., Osmundsen, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	420300 - Engineering- Lasers- (-1989) ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS AMPLIFICATION ARSENIC COMPOUNDS ARSENIDES Current measurement CURRENTS ELECTRIC CURRENTS ENGINEERING Exact sciences and technology FEEDBACK Fundamental areas of phenomenology (including applications) GAIN Gain measurement GALLIUM ARSENIDES GALLIUM COMPOUNDS GRATINGS Laser feedback Laser modes Laser tuning LASERS LINE BROADENING Optical feedback OPTICAL PROPERTIES Optics PHYSICAL PROPERTIES Physics PNICTIDES SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes THRESHOLD CURRENT Wavelength measurement WAVELENGTHS
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Beschreibung
Zusammenfassung:	We report on new methods to determine the curvature around maximum of the mode gain curve of homogeneously line-broadened semiconductor lasers, either by measuring the wavelength dependence of threshold current of the laser coupled to an external grating cavity or by measuring the tuning range of the laser versus the amount of optical feedback. We experimentally found the mode gain width and the current-induced peak-gain wavelength shift of a GaAlAs CSP laser to 175 Å and 2.1 Å/ mA, respectively.
ISSN:	0018-9197 1558-1713
DOI:	10.1109/JQE.1983.1072027