Closed system LPE growth of CdxHg1−xTe
Epitaxial layers of CdxHg1−xTe are grown on CdTe substrate from Hg‐ and Te‐rich solutions, as well as from stoichiometric melts. The interaction of the gas phase with the substrate and the layer during LPE growth of CdxHg1−x (0.2 ≦ x ≦ 0.3) in a closed system is studied. It is shown that mirror‐smoo...
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Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1983-07, Vol.78 (1), p.125-131 |
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creator | Mironov, K. E. Ogorodnikov, V. K. Rozumnyi, V. D. Ivanov-Omskii, V. I. |
description | Epitaxial layers of CdxHg1−xTe are grown on CdTe substrate from Hg‐ and Te‐rich solutions, as well as from stoichiometric melts. The interaction of the gas phase with the substrate and the layer during LPE growth of CdxHg1−x (0.2 ≦ x ≦ 0.3) in a closed system is studied. It is shown that mirror‐smooth layers can be obtained under conditions precluding condensation of vapour on the epi‐layer surface. The compositional profiles over the surface and in the direction of growth studied under different conditions are discussed. The mechanisms of constant and graded composition layer growth are considered. The advantages and shortcomings of the various methods of closed‐system CdxHg1−xTe liquid‐phase epitaxial growth are analyzed.
[Russian Text Ignored]. |
doi_str_mv | 10.1002/pssa.2210780114 |
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fullrecord | <record><control><sourceid>istex_pasca</sourceid><recordid>TN_cdi_pascalfrancis_primary_9407615</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_WNG_56HQVLG4_4</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3474-c60dd777ace945f4e6858c77f48111ed7e2b4058e26a70e398ec0a84524a2e153</originalsourceid><addsrcrecordid>eNqNkE1PwkAQhjdGExE9e-3Bg5fizH43nkiDYNIoBvy4bdbtFqtFSJcE-Aee_Yn-EkswcPU0mczzTt48hJwjdBCAXs1DsB1KEZQGRH5AWigoxiyRL4ekBcAw1okUx-QkhHcA4KCgRS7TahZ8HoV1WPhplA170aSeLRdv0ayI0nw1mODP1_dq7E_JUWGr4M_-Zps83vTG6SDO7vu3aTeLHeOKx05CniulrPMJFwX3UgvtlCq4RkSfK09fOQjtqbQKPEu0d2A1F5Rb6lGwNrnY_p3b4GxV1PbTlcHM63Jq67VJmtryH1hThmraYNdbbFlWfr07I5iNM7NxZvbOzHA06u7XJh1v02UjZ7VL2_rDSMWUMM93fSPk4OEp63PD2S_3Tm_-</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Closed system LPE growth of CdxHg1−xTe</title><source>Access via Wiley Online Library</source><creator>Mironov, K. E. ; Ogorodnikov, V. K. ; Rozumnyi, V. D. ; Ivanov-Omskii, V. I.</creator><creatorcontrib>Mironov, K. E. ; Ogorodnikov, V. K. ; Rozumnyi, V. D. ; Ivanov-Omskii, V. I.</creatorcontrib><description>Epitaxial layers of CdxHg1−xTe are grown on CdTe substrate from Hg‐ and Te‐rich solutions, as well as from stoichiometric melts. The interaction of the gas phase with the substrate and the layer during LPE growth of CdxHg1−x (0.2 ≦ x ≦ 0.3) in a closed system is studied. It is shown that mirror‐smooth layers can be obtained under conditions precluding condensation of vapour on the epi‐layer surface. The compositional profiles over the surface and in the direction of growth studied under different conditions are discussed. The mechanisms of constant and graded composition layer growth are considered. The advantages and shortcomings of the various methods of closed‐system CdxHg1−xTe liquid‐phase epitaxial growth are analyzed.
[Russian Text Ignored].</description><identifier>ISSN: 0031-8965</identifier><identifier>EISSN: 1521-396X</identifier><identifier>DOI: 10.1002/pssa.2210780114</identifier><identifier>CODEN: PSSABA</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Analysing. Testing. Standards ; Applied sciences ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Measurement of properties and materials state ; Metals, semimetals and alloys ; Metals. Metallurgy ; Methods of crystal growth; physics of crystal growth ; Nondestructive testing ; Physics ; Specific materials ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Physica status solidi. A, Applied research, 1983-07, Vol.78 (1), p.125-131</ispartof><rights>Copyright © 1983 WILEY‐VCH Verlag GmbH & Co. KGaA</rights><rights>1984 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3474-c60dd777ace945f4e6858c77f48111ed7e2b4058e26a70e398ec0a84524a2e153</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.2210780114$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.2210780114$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=9347282$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=9407615$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Mironov, K. E.</creatorcontrib><creatorcontrib>Ogorodnikov, V. K.</creatorcontrib><creatorcontrib>Rozumnyi, V. D.</creatorcontrib><creatorcontrib>Ivanov-Omskii, V. I.</creatorcontrib><title>Closed system LPE growth of CdxHg1−xTe</title><title>Physica status solidi. A, Applied research</title><addtitle>phys. stat. sol. (a)</addtitle><description>Epitaxial layers of CdxHg1−xTe are grown on CdTe substrate from Hg‐ and Te‐rich solutions, as well as from stoichiometric melts. The interaction of the gas phase with the substrate and the layer during LPE growth of CdxHg1−x (0.2 ≦ x ≦ 0.3) in a closed system is studied. It is shown that mirror‐smooth layers can be obtained under conditions precluding condensation of vapour on the epi‐layer surface. The compositional profiles over the surface and in the direction of growth studied under different conditions are discussed. The mechanisms of constant and graded composition layer growth are considered. The advantages and shortcomings of the various methods of closed‐system CdxHg1−xTe liquid‐phase epitaxial growth are analyzed.
[Russian Text Ignored].</description><subject>Analysing. Testing. Standards</subject><subject>Applied sciences</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Measurement of properties and materials state</subject><subject>Metals, semimetals and alloys</subject><subject>Metals. Metallurgy</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Nondestructive testing</subject><subject>Physics</subject><subject>Specific materials</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1983</creationdate><recordtype>article</recordtype><recordid>eNqNkE1PwkAQhjdGExE9e-3Bg5fizH43nkiDYNIoBvy4bdbtFqtFSJcE-Aee_Yn-EkswcPU0mczzTt48hJwjdBCAXs1DsB1KEZQGRH5AWigoxiyRL4ekBcAw1okUx-QkhHcA4KCgRS7TahZ8HoV1WPhplA170aSeLRdv0ayI0nw1mODP1_dq7E_JUWGr4M_-Zps83vTG6SDO7vu3aTeLHeOKx05CniulrPMJFwX3UgvtlCq4RkSfK09fOQjtqbQKPEu0d2A1F5Rb6lGwNrnY_p3b4GxV1PbTlcHM63Jq67VJmtryH1hThmraYNdbbFlWfr07I5iNM7NxZvbOzHA06u7XJh1v02UjZ7VL2_rDSMWUMM93fSPk4OEp63PD2S_3Tm_-</recordid><startdate>19830716</startdate><enddate>19830716</enddate><creator>Mironov, K. E.</creator><creator>Ogorodnikov, V. K.</creator><creator>Rozumnyi, V. D.</creator><creator>Ivanov-Omskii, V. I.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope></search><sort><creationdate>19830716</creationdate><title>Closed system LPE growth of CdxHg1−xTe</title><author>Mironov, K. E. ; Ogorodnikov, V. K. ; Rozumnyi, V. D. ; Ivanov-Omskii, V. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3474-c60dd777ace945f4e6858c77f48111ed7e2b4058e26a70e398ec0a84524a2e153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1983</creationdate><topic>Analysing. Testing. Standards</topic><topic>Applied sciences</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Measurement of properties and materials state</topic><topic>Metals, semimetals and alloys</topic><topic>Metals. Metallurgy</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Nondestructive testing</topic><topic>Physics</topic><topic>Specific materials</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>online_resources</toplevel><creatorcontrib>Mironov, K. E.</creatorcontrib><creatorcontrib>Ogorodnikov, V. K.</creatorcontrib><creatorcontrib>Rozumnyi, V. D.</creatorcontrib><creatorcontrib>Ivanov-Omskii, V. I.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><jtitle>Physica status solidi. A, Applied research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mironov, K. E.</au><au>Ogorodnikov, V. K.</au><au>Rozumnyi, V. D.</au><au>Ivanov-Omskii, V. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Closed system LPE growth of CdxHg1−xTe</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1983-07-16</date><risdate>1983</risdate><volume>78</volume><issue>1</issue><spage>125</spage><epage>131</epage><pages>125-131</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>Epitaxial layers of CdxHg1−xTe are grown on CdTe substrate from Hg‐ and Te‐rich solutions, as well as from stoichiometric melts. The interaction of the gas phase with the substrate and the layer during LPE growth of CdxHg1−x (0.2 ≦ x ≦ 0.3) in a closed system is studied. It is shown that mirror‐smooth layers can be obtained under conditions precluding condensation of vapour on the epi‐layer surface. The compositional profiles over the surface and in the direction of growth studied under different conditions are discussed. The mechanisms of constant and graded composition layer growth are considered. The advantages and shortcomings of the various methods of closed‐system CdxHg1−xTe liquid‐phase epitaxial growth are analyzed.
[Russian Text Ignored].</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.2210780114</doi><tpages>7</tpages></addata></record> |
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subjects | Analysing. Testing. Standards Applied sciences Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Measurement of properties and materials state Metals, semimetals and alloys Metals. Metallurgy Methods of crystal growth physics of crystal growth Nondestructive testing Physics Specific materials Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
title | Closed system LPE growth of CdxHg1−xTe |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T20%3A36%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Closed%20system%20LPE%20growth%20of%20CdxHg1%E2%88%92xTe&rft.jtitle=Physica%20status%20solidi.%20A,%20Applied%20research&rft.au=Mironov,%20K.%20E.&rft.date=1983-07-16&rft.volume=78&rft.issue=1&rft.spage=125&rft.epage=131&rft.pages=125-131&rft.issn=0031-8965&rft.eissn=1521-396X&rft.coden=PSSABA&rft_id=info:doi/10.1002/pssa.2210780114&rft_dat=%3Cistex_pasca%3Eark_67375_WNG_56HQVLG4_4%3C/istex_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |