Closed system LPE growth of CdxHg1−xTe

Epitaxial layers of CdxHg1−xTe are grown on CdTe substrate from Hg‐ and Te‐rich solutions, as well as from stoichiometric melts. The interaction of the gas phase with the substrate and the layer during LPE growth of CdxHg1−x (0.2 ≦ x ≦ 0.3) in a closed system is studied. It is shown that mirror‐smooth layers can be obtained under conditions precluding condensation of vapour on the epi‐layer surface. The compositional profiles over the surface and in the direction of growth studied under different conditions are discussed. The mechanisms of constant and graded composition layer growth are considered. The advantages and shortcomings of the various methods of closed‐system CdxHg1−xTe liquid‐phase epitaxial growth are analyzed. [Russian Text Ignored].