A 2 - 18 - GHz Monolithic Distributed Amplifier Using Dual-Gate GaAs FET's
This paper describes a 2- 18-GHz monolithic distributed amplifier with over 6-dB gain, +- 0.5-dB gain flatness, and less than 2.0:1 VSWR. Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm. The amplifier is designed with dual-gate GaAs FET's instead of sin...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1984-12, Vol.32 (12), p.1693-1698 |
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| container_end_page | 1698 |
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| container_issue | 12 |
| container_start_page | 1693 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 32 |
| creator | Kennan, W. Andrade, T. Huang, C.C. |
| description | This paper describes a 2- 18-GHz monolithic distributed amplifier with over 6-dB gain, +- 0.5-dB gain flatness, and less than 2.0:1 VSWR. Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm. The amplifier is designed with dual-gate GaAs FET's instead of single-gate FET's for maximum gain over the design bandwidth. Cascaded amplifier performance will also be presented. |
| doi_str_mv | 10.1109/TMTT.1984.1132916 |
| format | Article |
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Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm. The amplifier is designed with dual-gate GaAs FET's instead of single-gate FET's for maximum gain over the design bandwidth. Cascaded amplifier performance will also be presented.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.1984.1132916</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bandwidth ; Circuit properties ; Distributed amplifiers ; Electric, optical and optoelectronic circuits ; Electronics ; Equivalent circuits ; Exact sciences and technology ; FETs ; Gallium arsenide ; Impedance ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Noise measurement ; Parasitic capacitance ; Power measurement ; Transmission line theory</subject><ispartof>IEEE transactions on microwave theory and techniques, 1984-12, Vol.32 (12), p.1693-1698</ispartof><rights>1985 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-7fb60f1a597d93d2601201c4059d63bb078b0d59c5d321076aca13489ae6551f3</citedby><cites>FETCH-LOGICAL-c393t-7fb60f1a597d93d2601201c4059d63bb078b0d59c5d321076aca13489ae6551f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1132916$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1132916$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=9107538$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kennan, W.</creatorcontrib><creatorcontrib>Andrade, T.</creatorcontrib><creatorcontrib>Huang, C.C.</creatorcontrib><title>A 2 - 18 - GHz Monolithic Distributed Amplifier Using Dual-Gate GaAs FET's</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This paper describes a 2- 18-GHz monolithic distributed amplifier with over 6-dB gain, +- 0.5-dB gain flatness, and less than 2.0:1 VSWR. Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm. The amplifier is designed with dual-gate GaAs FET's instead of single-gate FET's for maximum gain over the design bandwidth. Cascaded amplifier performance will also be presented.</description><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Circuit properties</subject><subject>Distributed amplifiers</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Equivalent circuits</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Gallium arsenide</subject><subject>Impedance</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Noise measurement</subject><subject>Parasitic capacitance</subject><subject>Power measurement</subject><subject>Transmission line theory</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNpFkDFPwzAQhS0EEqXwAxCLBwRTii-OY3uMWgigVizpHDmOA0ZpUuxkgF-Pq0aw3Omd3ns6fQhdA1kAEPlQbIpiAVIkQdJYQnqCZsAYj2TKySmaEQIikokg5-jC-88gE0bEDL1mOMYRBhFG_vyDN33Xt3b4sBqvrB-crcbB1Djb7VvbWOPw1tvuHa9G1Ua5GgzOVebx02Nx7y_RWaNab66mPUfbcF8-R-u3_GWZrSNNJR0i3lQpaUAxyWtJ6zglEBPQCWGyTmlVES4qUjOpWU1jIDxVWgFNhFQmZQwaOkd3x969679G44dyZ702bas604--jAVwkfA0GOFo1K733pmm3Du7U-67BFIeqJUHauWBWjlRC5nbqVx5rdrGqU5b_xeU4SFGRbDdHG3WGPNfO5X8AvkgcSY</recordid><startdate>198412</startdate><enddate>198412</enddate><creator>Kennan, W.</creator><creator>Andrade, T.</creator><creator>Huang, C.C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>198412</creationdate><title>A 2 - 18 - GHz Monolithic Distributed Amplifier Using Dual-Gate GaAs FET's</title><author>Kennan, W. ; Andrade, T. ; Huang, C.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-7fb60f1a597d93d2601201c4059d63bb078b0d59c5d321076aca13489ae6551f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>Circuit properties</topic><topic>Distributed amplifiers</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Equivalent circuits</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>Gallium arsenide</topic><topic>Impedance</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Noise measurement</topic><topic>Parasitic capacitance</topic><topic>Power measurement</topic><topic>Transmission line theory</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kennan, W.</creatorcontrib><creatorcontrib>Andrade, T.</creatorcontrib><creatorcontrib>Huang, C.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kennan, W.</au><au>Andrade, T.</au><au>Huang, C.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 2 - 18 - GHz Monolithic Distributed Amplifier Using Dual-Gate GaAs FET's</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1984-12</date><risdate>1984</risdate><volume>32</volume><issue>12</issue><spage>1693</spage><epage>1698</epage><pages>1693-1698</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This paper describes a 2- 18-GHz monolithic distributed amplifier with over 6-dB gain, +- 0.5-dB gain flatness, and less than 2.0:1 VSWR. Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm. The amplifier is designed with dual-gate GaAs FET's instead of single-gate FET's for maximum gain over the design bandwidth. Cascaded amplifier performance will also be presented.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.1984.1132916</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 1984-12, Vol.32 (12), p.1693-1698 |
| issn | 0018-9480 1557-9670 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_9107538 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Bandwidth Circuit properties Distributed amplifiers Electric, optical and optoelectronic circuits Electronics Equivalent circuits Exact sciences and technology FETs Gallium arsenide Impedance Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise measurement Parasitic capacitance Power measurement Transmission line theory |
| title | A 2 - 18 - GHz Monolithic Distributed Amplifier Using Dual-Gate GaAs FET's |
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