A 2 - 18 - GHz Monolithic Distributed Amplifier Using Dual-Gate GaAs FET's

This paper describes a 2- 18-GHz monolithic distributed amplifier with over 6-dB gain, +- 0.5-dB gain flatness, and less than 2.0:1 VSWR. Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm. The amplifier is designed with dual-gate GaAs FET's instead of sin...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 1984-12, Vol.32 (12), p.1693-1698
Hauptverfasser:	Kennan, W., Andrade, T., Huang, C.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bandwidth Circuit properties Distributed amplifiers Electric, optical and optoelectronic circuits Electronics Equivalent circuits Exact sciences and technology FETs Gallium arsenide Impedance Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise measurement Parasitic capacitance Power measurement Transmission line theory
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Beschreibung
Zusammenfassung:	This paper describes a 2- 18-GHz monolithic distributed amplifier with over 6-dB gain, +- 0.5-dB gain flatness, and less than 2.0:1 VSWR. Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm. The amplifier is designed with dual-gate GaAs FET's instead of single-gate FET's for maximum gain over the design bandwidth. Cascaded amplifier performance will also be presented.
ISSN:	0018-9480 1557-9670
DOI:	10.1109/TMTT.1984.1132916