Dependence of the yield of hard incoherent X-rays from femtosecond laser plasma on the atomic number of a target material
The yield of hard incoherent X-rays emitted by a dense femtosecond laser plasma is studied as a function of the atomic number Z of the target material. It is shown that for Z values in the range from 14 (Si) to 73 (Ta), the efficiency of laser radiation conversion to X-rays with quantum energy excee...
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Veröffentlicht in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2000-10, Vol.30 (10), p.896-900 |
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creator | Volkov, Roman V Gordienko, Vyacheslav M Mikheev, Pavel M Savel'ev, Andrei B |
description | The yield of hard incoherent X-rays emitted by a dense femtosecond laser plasma is studied as a function of the atomic number Z of the target material. It is shown that for Z values in the range from 14 (Si) to 73 (Ta), the efficiency of laser radiation conversion to X-rays with quantum energy exceeding 8 keV varies as Z{sup 3/2}. The temperature of hot electrons formed in the plasma weakly depends on the atomic number of the target material and is equal to {approx}4 keV for both Si (Z=14) and Ta (Z=73) targets for laser radiation intensities {approx}10{sup 16} W/cm{sup 2}. (interaction of laser radiation with matter. laser plasma) |
doi_str_mv | 10.1070/QE2000v030n10ABEH001828 |
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It is shown that for Z values in the range from 14 (Si) to 73 (Ta), the efficiency of laser radiation conversion to X-rays with quantum energy exceeding 8 keV varies as Z{sup 3/2}. The temperature of hot electrons formed in the plasma weakly depends on the atomic number of the target material and is equal to {approx}4 keV for both Si (Z=14) and Ta (Z=73) targets for laser radiation intensities {approx}10{sup 16} W/cm{sup 2}. 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It is shown that for Z values in the range from 14 (Si) to 73 (Ta), the efficiency of laser radiation conversion to X-rays with quantum energy exceeding 8 keV varies as Z{sup 3/2}. The temperature of hot electrons formed in the plasma weakly depends on the atomic number of the target material and is equal to {approx}4 keV for both Si (Z=14) and Ta (Z=73) targets for laser radiation intensities {approx}10{sup 16} W/cm{sup 2}. 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It is shown that for Z values in the range from 14 (Si) to 73 (Ta), the efficiency of laser radiation conversion to X-rays with quantum energy exceeding 8 keV varies as Z{sup 3/2}. The temperature of hot electrons formed in the plasma weakly depends on the atomic number of the target material and is equal to {approx}4 keV for both Si (Z=14) and Ta (Z=73) targets for laser radiation intensities {approx}10{sup 16} W/cm{sup 2}. (interaction of laser radiation with matter. laser plasma)</abstract><cop>Woodbury, NY</cop><pub>IOP Publishing</pub><doi>10.1070/QE2000v030n10ABEH001828</doi><tpages>5</tpages></addata></record> |
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source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
subjects | 70 PLASMA PHYSICS AND FUSION TECHNOLOGY ATOMIC NUMBER EFFICIENCY ELECTROMAGNETIC RADIATION ELECTRON TEMPERATURE ENERGY RANGE INCOHERENT SCATTERING IONIZING RADIATIONS KEV RANGE KEV RANGE 01-10 LASER RADIATION LASER TARGETS LASER-PRODUCED PLASMA PLASMA RADIATIONS SCATTERING TARGETS X RADIATION YIELDS |
title | Dependence of the yield of hard incoherent X-rays from femtosecond laser plasma on the atomic number of a target material |
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