Dependence of the yield of hard incoherent X-rays from femtosecond laser plasma on the atomic number of a target material

The yield of hard incoherent X-rays emitted by a dense femtosecond laser plasma is studied as a function of the atomic number Z of the target material. It is shown that for Z values in the range from 14 (Si) to 73 (Ta), the efficiency of laser radiation conversion to X-rays with quantum energy excee...

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Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2000-10, Vol.30 (10), p.896-900
Hauptverfasser: Volkov, Roman V, Gordienko, Vyacheslav M, Mikheev, Pavel M, Savel'ev, Andrei B
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Sprache:eng
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Zusammenfassung:The yield of hard incoherent X-rays emitted by a dense femtosecond laser plasma is studied as a function of the atomic number Z of the target material. It is shown that for Z values in the range from 14 (Si) to 73 (Ta), the efficiency of laser radiation conversion to X-rays with quantum energy exceeding 8 keV varies as Z{sup 3/2}. The temperature of hot electrons formed in the plasma weakly depends on the atomic number of the target material and is equal to {approx}4 keV for both Si (Z=14) and Ta (Z=73) targets for laser radiation intensities {approx}10{sup 16} W/cm{sup 2}. (interaction of laser radiation with matter. laser plasma)
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2000v030n10ABEH001828