Local temperature rise during laser induced etching of gallium arsenide in SiCl4 atmosphere

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Veröffentlicht in:	Japanese journal of applied physics 1985-01, Vol.24 (9), p.L705-L708
Hauptverfasser:	TAKAI, M, NAKAI, H, TSUCHIMOTO, J, GAMO, K, NAMBA, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid-fluid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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doi_str_mv	10.1143/jjap.24.l705
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid-fluid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
title	Local temperature rise during laser induced etching of gallium arsenide in SiCl4 atmosphere
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