Low-frequency pseudogeneration-Recombination noise of MOSFET's stressed by channel hot electrons in weak inversion

Up to now, the effect of trap distribution over distance in the oxide on low-frequency noise has not been verified experimentally. In this paper, a new method to detect the pseudo-g-r noise, caused by a nonuniform trap distribution, is proposed using MOSFET's stressed by channel hot electrons....

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Veröffentlicht in:IEEE transactions on electron devices 1986-04, Vol.33 (4), p.516-519
1. Verfasser: Fang, Z-H
Format: Artikel
Sprache:eng
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