Low-frequency pseudogeneration-Recombination noise of MOSFET's stressed by channel hot electrons in weak inversion
Up to now, the effect of trap distribution over distance in the oxide on low-frequency noise has not been verified experimentally. In this paper, a new method to detect the pseudo-g-r noise, caused by a nonuniform trap distribution, is proposed using MOSFET's stressed by channel hot electrons....
Gespeichert in:
Veröffentlicht in: | IEEE transactions on electron devices 1986-04, Vol.33 (4), p.516-519 |
---|---|
1. Verfasser: | |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!