Low-frequency pseudogeneration-Recombination noise of MOSFET's stressed by channel hot electrons in weak inversion

Up to now, the effect of trap distribution over distance in the oxide on low-frequency noise has not been verified experimentally. In this paper, a new method to detect the pseudo-g-r noise, caused by a nonuniform trap distribution, is proposed using MOSFET's stressed by channel hot electrons. The experimental results are interpreted well by the early given theories and show that the pseudo-g-r noise can be obtained provided that the MOSFET's are aged sufficiently by electrical stress and operate in weak inversion.