Doping and electrical characteristics of in-situ heavily B-doped Si1-x-yGexCy films epitaxially grown using ultraclean LPCVD

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Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 2000-12, Vol.380 (1-2), p.57-60
Hauptverfasser:	NODA, Takaaki, DOOHWAN LEE, HYUNYOUNG SHIM, SAKURABA, Masao, MATSUURA, Takashi, MUROTA, Junichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities: doping, implantation, distribution, concentration, etc Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Other inorganic semiconductors Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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