Deep-level and profile effects upon low-noise ion-implanted GaAs MESFET's

Deep-level and profile effects upon low-noise ion-implanted GaAs MESFET's

The noise and RF performance of recessed-gate GaAs ion-implanted MESFET's as a function of various doping profiles has been theoretically investigated. The effects of implant energy and dose as well as varying deep-level concentration are included, Degradation of device performance with increas...

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Veröffentlicht in:IEEE transactions on electron devices 1985-01, Vol.32 (5), p.877-882
Hauptverfasser: Trew, R.J., Khatibzadeh, M.A., Masnari, N.A.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Beschreibung
Zusammenfassung:The noise and RF performance of recessed-gate GaAs ion-implanted MESFET's as a function of various doping profiles has been theoretically investigated. The effects of implant energy and dose as well as varying deep-level concentration are included, Degradation of device performance with increasing deep-level concentration is predicted and the responsible physical mechanisms revealed. Also, an optimum gate recess depth is shown to exist. The study has indicated a number of design rules for the fabrication of optimized low-noise ion-implanted MESFET's.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.22042