A high-frequency GaAs optical guided-wave electrooptic interferometric modulator
The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 μm are presented. The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electric...
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| Veröffentlicht in: | IEEE journal of quantum electronics 1985-01, Vol.21 (1), p.18-21 |
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| container_title | IEEE journal of quantum electronics |
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| creator | Donnelly, J. DeMeo, N. Ferrante, G. Nichols, K. |
| description | The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 μm are presented. The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electrical bandwidth of an interferometer with 2 mm long active arms was 2.2 GHz and limited by parasitics. This corresponds to a small signal optical bandwidth of ≈ 3.0 GHz when the interferometer is biased in a linear portion of the optical output versus voltage characteristics. Reduction of parasitics should result in a substantial increase in the bandwidth of these devices. |
| doi_str_mv | 10.1109/JQE.1985.1072541 |
| format | Article |
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The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electrical bandwidth of an interferometer with 2 mm long active arms was 2.2 GHz and limited by parasitics. This corresponds to a small signal optical bandwidth of ≈ 3.0 GHz when the interferometer is biased in a linear portion of the optical output versus voltage characteristics. Reduction of parasitics should result in a substantial increase in the bandwidth of these devices.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.1985.1072541</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Arm ; Bandwidth ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronics ; Electrooptic effects ; Electrooptic modulators ; Etching ; Exact sciences and technology ; Gallium arsenide ; High speed optical techniques ; Miscellaneous ; Optical and optoelectronic circuits ; Optical interferometry ; Optical modulation ; Optical waveguides</subject><ispartof>IEEE journal of quantum electronics, 1985-01, Vol.21 (1), p.18-21</ispartof><rights>1986 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-924e9a20145b07047ca156fdd47a5608e7652918e84a75ef20033ed89db887c43</citedby><cites>FETCH-LOGICAL-c383t-924e9a20145b07047ca156fdd47a5608e7652918e84a75ef20033ed89db887c43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1072541$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,4010,27900,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1072541$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8482189$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Donnelly, J.</creatorcontrib><creatorcontrib>DeMeo, N.</creatorcontrib><creatorcontrib>Ferrante, G.</creatorcontrib><creatorcontrib>Nichols, K.</creatorcontrib><title>A high-frequency GaAs optical guided-wave electrooptic interferometric modulator</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 μm are presented. The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electrical bandwidth of an interferometer with 2 mm long active arms was 2.2 GHz and limited by parasitics. This corresponds to a small signal optical bandwidth of ≈ 3.0 GHz when the interferometer is biased in a linear portion of the optical output versus voltage characteristics. Reduction of parasitics should result in a substantial increase in the bandwidth of these devices.</description><subject>Applied sciences</subject><subject>Arm</subject><subject>Bandwidth</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Electrooptic effects</subject><subject>Electrooptic modulators</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>High speed optical techniques</subject><subject>Miscellaneous</subject><subject>Optical and optoelectronic circuits</subject><subject>Optical interferometry</subject><subject>Optical modulation</subject><subject>Optical waveguides</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNqNkcFLwzAUh4MoOKd3wUsP4q0zSZMmOY6hUxmooOeQpa9bpW1m0ir7783sEG96ejze9z4e74fQOcETQrC6fni-mRAl-YRgQTkjB2hEOJcpESQ7RCOMiUwVUeIYnYTwFlvGJB6hp2myrlbrtPTw3kNrt8ncTEPiNl1lTZ2s-qqAIv00H5BADbbz7nuUVG0HvgTvGuh87BtX9LXpnD9FR6WpA5zt6xi93t68zO7SxeP8fjZdpDaTWZcqykAZGs_gSywwE9YQnpdFwYThOZYgck4VkSCZERxKinGWQSFVsZRSWJaN0dXg3XgXLw-dbqpgoa5NC64Pmsos41Lwv0GW0_yfIJGK5xHEA2i9C8FDqTe-aozfaoL1Lgwdw9C7MPQ-jLhyuXebEP9aetPaKvzsSSZpdEfsYsAqAPhlHSRfbsSRgQ</recordid><startdate>198501</startdate><enddate>198501</enddate><creator>Donnelly, J.</creator><creator>DeMeo, N.</creator><creator>Ferrante, G.</creator><creator>Nichols, K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7U5</scope></search><sort><creationdate>198501</creationdate><title>A high-frequency GaAs optical guided-wave electrooptic interferometric modulator</title><author>Donnelly, J. ; DeMeo, N. ; Ferrante, G. ; Nichols, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-924e9a20145b07047ca156fdd47a5608e7652918e84a75ef20033ed89db887c43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Applied sciences</topic><topic>Arm</topic><topic>Bandwidth</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Electrooptic effects</topic><topic>Electrooptic modulators</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>High speed optical techniques</topic><topic>Miscellaneous</topic><topic>Optical and optoelectronic circuits</topic><topic>Optical interferometry</topic><topic>Optical modulation</topic><topic>Optical waveguides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Donnelly, J.</creatorcontrib><creatorcontrib>DeMeo, N.</creatorcontrib><creatorcontrib>Ferrante, G.</creatorcontrib><creatorcontrib>Nichols, K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Donnelly, J.</au><au>DeMeo, N.</au><au>Ferrante, G.</au><au>Nichols, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A high-frequency GaAs optical guided-wave electrooptic interferometric modulator</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1985-01</date><risdate>1985</risdate><volume>21</volume><issue>1</issue><spage>18</spage><epage>21</epage><pages>18-21</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 μm are presented. The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electrical bandwidth of an interferometer with 2 mm long active arms was 2.2 GHz and limited by parasitics. This corresponds to a small signal optical bandwidth of ≈ 3.0 GHz when the interferometer is biased in a linear portion of the optical output versus voltage characteristics. Reduction of parasitics should result in a substantial increase in the bandwidth of these devices.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JQE.1985.1072541</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0018-9197 |
| ispartof | IEEE journal of quantum electronics, 1985-01, Vol.21 (1), p.18-21 |
| issn | 0018-9197 1558-1713 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_8482189 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Arm Bandwidth Circuit properties Electric, optical and optoelectronic circuits Electronics Electrooptic effects Electrooptic modulators Etching Exact sciences and technology Gallium arsenide High speed optical techniques Miscellaneous Optical and optoelectronic circuits Optical interferometry Optical modulation Optical waveguides |
| title | A high-frequency GaAs optical guided-wave electrooptic interferometric modulator |
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