A high-frequency GaAs optical guided-wave electrooptic interferometric modulator

The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 μm are presented. The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electric...

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Veröffentlicht in:	IEEE journal of quantum electronics 1985-01, Vol.21 (1), p.18-21
Hauptverfasser:	Donnelly, J., DeMeo, N., Ferrante, G., Nichols, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Arm Bandwidth Circuit properties Electric, optical and optoelectronic circuits Electronics Electrooptic effects Electrooptic modulators Etching Exact sciences and technology Gallium arsenide High speed optical techniques Miscellaneous Optical and optoelectronic circuits Optical interferometry Optical modulation Optical waveguides
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Beschreibung
Zusammenfassung:	The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 μm are presented. The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electrical bandwidth of an interferometer with 2 mm long active arms was 2.2 GHz and limited by parasitics. This corresponds to a small signal optical bandwidth of ≈ 3.0 GHz when the interferometer is biased in a linear portion of the optical output versus voltage characteristics. Reduction of parasitics should result in a substantial increase in the bandwidth of these devices.
ISSN:	0018-9197 1558-1713
DOI:	10.1109/JQE.1985.1072541