Properties and structure of silicon oxynitride films obtained in a hydrazine plasma

The effect is studied of the partial pressure of hydrazine on the composition of silicon oxynitride films produced by reactive sputtering in plasma of a N2H4 + Ar mixture. Refractive index, optical band gap, and the IR absorption band maximum of nonstoichiometric oxynitrides are shown to vary monotonously with variations in the film composition. It is established that up to 17 at% the excess silicon in silicon oxynitride, does not exist in the form of amorphous clusters which are able to crystallize at vacuum annealing. [Russian Text Ignored].