Lateral HVIC with 1200-V bipolar and field-effect devices

The 1200-V blocking capability of lateral high-voltage devices has been achieved through theoretical and experimental investigation. The feasibility of a 1200-V lateral n-p-n bipolar junction transistor, p-n diode, and lateral DMOSFET has been demonstrated for the first time. The on-resistance of th...

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Veröffentlicht in:	IEEE transactions on electron devices 1986-12, Vol.33 (12), p.1992-2001
Hauptverfasser:	Chang, M.F., Pifer, G., Yilmaz, H., Wildi, E.J., Hodgins, R.G., Owyang, K., Adler, M.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electrical engineering. Electrical power engineering Electronics Exact sciences and technology Integrated circuits Power electronics, power supplies Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	The 1200-V blocking capability of lateral high-voltage devices has been achieved through theoretical and experimental investigation. The feasibility of a 1200-V lateral n-p-n bipolar junction transistor, p-n diode, and lateral DMOSFET has been demonstrated for the first time. The on-resistance of the 1200-V DMOSFET is 4 times less than its 1200-V n-p-n BJT counterpart. The major contribution to high BJT on-resistance comes from the series JFET pinch resistance.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/T-ED.1986.22858