Transport phenomena in amorphous silicon doped by ion implanted of 3d metals
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1986, Vol.95 (2), p.635-640 |
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| container_end_page | 640 |
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| container_issue | 2 |
| container_start_page | 635 |
| container_title | Physica status solidi. A, Applied research |
| container_volume | 95 |
| creator | DVURECHENSKII, A. V DRAVIN, V. A RYAZANTSEV, I. A ANTONENKO, A. K LANDOCHKIN, I. G |
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| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_8115640</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>8115640</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_81156403</originalsourceid><addsrcrecordid>eNqNjb0KwjAURoMoWH_e4Q6uhRvT1nYWxcGxg5tc25RG8kdSh769GXwAp8N3-OAsWMbLI89FUz2WLEMUPK-bqlyzTYxvRCzwhBm7t4Fs9C5M4EdpnZGWQFkg44If3SdCVFp1zkLvvOzhNYNKQxmvyU5JuAFED0ZOpOOOrYYEuf9xyw7XS3u-5Z5iR3pIqU7Fpw_KUJifNedlVaD48_YFIBtAiA</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Transport phenomena in amorphous silicon doped by ion implanted of 3d metals</title><source>Access via Wiley Online Library</source><creator>DVURECHENSKII, A. V ; DRAVIN, V. A ; RYAZANTSEV, I. A ; ANTONENKO, A. K ; LANDOCHKIN, I. G</creator><creatorcontrib>DVURECHENSKII, A. V ; DRAVIN, V. A ; RYAZANTSEV, I. A ; ANTONENKO, A. K ; LANDOCHKIN, I. G</creatorcontrib><identifier>ISSN: 0031-8965</identifier><identifier>EISSN: 1521-396X</identifier><identifier>CODEN: PSSABA</identifier><language>eng</language><publisher>Berlin: Wiley-VCH</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity phenomena in semiconductors and insulators ; Electronic transport in condensed matter ; Exact sciences and technology ; Physics ; Thermoelectric and thermomagnetic effects</subject><ispartof>Physica status solidi. A, Applied research, 1986, Vol.95 (2), p.635-640</ispartof><rights>1987 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8115640$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>DVURECHENSKII, A. V</creatorcontrib><creatorcontrib>DRAVIN, V. A</creatorcontrib><creatorcontrib>RYAZANTSEV, I. A</creatorcontrib><creatorcontrib>ANTONENKO, A. K</creatorcontrib><creatorcontrib>LANDOCHKIN, I. G</creatorcontrib><title>Transport phenomena in amorphous silicon doped by ion implanted of 3d metals</title><title>Physica status solidi. A, Applied research</title><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity phenomena in semiconductors and insulators</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Thermoelectric and thermomagnetic effects</subject><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNqNjb0KwjAURoMoWH_e4Q6uhRvT1nYWxcGxg5tc25RG8kdSh769GXwAp8N3-OAsWMbLI89FUz2WLEMUPK-bqlyzTYxvRCzwhBm7t4Fs9C5M4EdpnZGWQFkg44If3SdCVFp1zkLvvOzhNYNKQxmvyU5JuAFED0ZOpOOOrYYEuf9xyw7XS3u-5Z5iR3pIqU7Fpw_KUJifNedlVaD48_YFIBtAiA</recordid><startdate>1986</startdate><enddate>1986</enddate><creator>DVURECHENSKII, A. V</creator><creator>DRAVIN, V. A</creator><creator>RYAZANTSEV, I. A</creator><creator>ANTONENKO, A. K</creator><creator>LANDOCHKIN, I. G</creator><general>Wiley-VCH</general><scope>IQODW</scope></search><sort><creationdate>1986</creationdate><title>Transport phenomena in amorphous silicon doped by ion implanted of 3d metals</title><author>DVURECHENSKII, A. V ; DRAVIN, V. A ; RYAZANTSEV, I. A ; ANTONENKO, A. K ; LANDOCHKIN, I. G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_81156403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity phenomena in semiconductors and insulators</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Thermoelectric and thermomagnetic effects</topic><toplevel>online_resources</toplevel><creatorcontrib>DVURECHENSKII, A. V</creatorcontrib><creatorcontrib>DRAVIN, V. A</creatorcontrib><creatorcontrib>RYAZANTSEV, I. A</creatorcontrib><creatorcontrib>ANTONENKO, A. K</creatorcontrib><creatorcontrib>LANDOCHKIN, I. G</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Physica status solidi. A, Applied research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DVURECHENSKII, A. V</au><au>DRAVIN, V. A</au><au>RYAZANTSEV, I. A</au><au>ANTONENKO, A. K</au><au>LANDOCHKIN, I. G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transport phenomena in amorphous silicon doped by ion implanted of 3d metals</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><date>1986</date><risdate>1986</risdate><volume>95</volume><issue>2</issue><spage>635</spage><epage>640</epage><pages>635-640</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><cop>Berlin</cop><pub>Wiley-VCH</pub></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0031-8965 |
| ispartof | Physica status solidi. A, Applied research, 1986, Vol.95 (2), p.635-640 |
| issn | 0031-8965 1521-396X |
| language | eng |
| recordid | cdi_pascalfrancis_primary_8115640 |
| source | Access via Wiley Online Library |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Physics Thermoelectric and thermomagnetic effects |
| title | Transport phenomena in amorphous silicon doped by ion implanted of 3d metals |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T18%3A14%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Transport%20phenomena%20in%20amorphous%20silicon%20doped%20by%20ion%20implanted%20of%203d%20metals&rft.jtitle=Physica%20status%20solidi.%20A,%20Applied%20research&rft.au=DVURECHENSKII,%20A.%20V&rft.date=1986&rft.volume=95&rft.issue=2&rft.spage=635&rft.epage=640&rft.pages=635-640&rft.issn=0031-8965&rft.eissn=1521-396X&rft.coden=PSSABA&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E8115640%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |