Modeling of hall devices under locally inverted magnetic field

We present the two-dimensional numerical analysis of carrier transport in semiconductor magnetic sensors exposed to a nonuniform locally inverted induction B z (x, y). Using a finite element scheme we obtain the electrostatic potential and current density distributions for realistic device and field...

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Veröffentlicht in:	IEEE electron device letters 1987-01, Vol.8 (1), p.1-3
Hauptverfasser:	Nathan, A., Allegretto, W., Baltes, H.P., Sugiyama, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Current density Electron mobility Electronics Electrostatics Equations Exact sciences and technology Finite element methods Geometry Magnetic domains Magnetic fields Magnetic sensors Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Numerical analysis Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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