Modeling of hall devices under locally inverted magnetic field

Modeling of hall devices under locally inverted magnetic field

We present the two-dimensional numerical analysis of carrier transport in semiconductor magnetic sensors exposed to a nonuniform locally inverted induction B z (x, y). Using a finite element scheme we obtain the electrostatic potential and current density distributions for realistic device and field...

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Veröffentlicht in:IEEE electron device letters 1987-01, Vol.8 (1), p.1-3
Hauptverfasser: Nathan, A., Allegretto, W., Baltes, H.P., Sugiyama, Y.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Current density
Electron mobility
Electronics
Electrostatics
Equations
Exact sciences and technology
Finite element methods
Geometry
Magnetic domains
Magnetic fields
Magnetic sensors
Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics
Numerical analysis
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:We present the two-dimensional numerical analysis of carrier transport in semiconductor magnetic sensors exposed to a nonuniform locally inverted induction B z (x, y). Using a finite element scheme we obtain the electrostatic potential and current density distributions for realistic device and field configurations not accessible to previous modeling methods.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26530