SixGe1−xGaAs Heterojunction IMPATT-Diodes

Experimental research IMPATT‐diodes on heterostructures SixGe1−x‐GaAs showed that the interphase boundary is noted with high thermal and radiation resistance. It is shown that such diodes are an equivalent alternative IMPATT‐diodes with type of Schottky barrier.

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Bibliographische Detailangaben
Veröffentlicht in:	Crystal research and technology (1979) 1986-03, Vol.21 (3), p.413-421
Hauptverfasser:	Brailovskii, E. J., Matveeva, L. A., Meľnikov, G. D., Mikhailov, J. F., Semenova, S. N., Tkhorik, J. A., Khazan, L. S., Laichter, V., Červenák, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Diodes Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Experimental research IMPATT‐diodes on heterostructures SixGe1−x‐GaAs showed that the interphase boundary is noted with high thermal and radiation resistance. It is shown that such diodes are an equivalent alternative IMPATT‐diodes with type of Schottky barrier.
ISSN:	0232-1300 1521-4079
DOI:	10.1002/crat.2170210316