Enhanced carrier lifetime and diffusion length in GaAs by strained-layer MOCVD
It is shown that by MOCVD growth of a single strained GaAs:In layer, the quality of epitaxial GaAs material can be remarkably enhanced. This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. This technique permits an improvement of the quality of electronic and op...
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| Veröffentlicht in: | IEEE electron device letters 1986-02, Vol.7 (2), p.101-103 |
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| container_end_page | 103 |
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| container_issue | 2 |
| container_start_page | 101 |
| container_title | IEEE electron device letters |
| container_volume | 7 |
| creator | Beneking, H. Narozny, P. Roentgen, P. Yoshida, M. |
| description | It is shown that by MOCVD growth of a single strained GaAs:In layer, the quality of epitaxial GaAs material can be remarkably enhanced. This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. This technique permits an improvement of the quality of electronic and optoelectronic bipolar devices. |
| doi_str_mv | 10.1109/EDL.1986.26308 |
| format | Article |
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This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. 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This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. This technique permits an improvement of the quality of electronic and optoelectronic bipolar devices.</description><subject>Applied sciences</subject><subject>Atomic layer deposition</subject><subject>Charge carrier lifetime</subject><subject>Charge carriers: generation, recombination, lifetime, and trapping</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity phenomena in semiconductors and insulators</subject><subject>Doping</subject><subject>Electronic transport in condensed matter</subject><subject>Epitaxial layers</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Lattices</subject><subject>MOCVD</subject><subject>Other techniques and industries</subject><subject>Physics</subject><subject>Schottky diodes</subject><subject>Semiconductor diodes</subject><subject>Substrates</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAURS0EEqWwsrB4QGwJdvxRZ6zaUpAKXYDVcpxnapQ6xU6H_ntSWsHI9O5w7n3SQeiakpxSUt7PpouclkrmhWREnaABFUJlREh2igZkxGnGKJHn6CKlT0Io5yM-QC-zsDLBQo2tidFDxI130Pk1YBNqXHvntsm3ATcQProV9gHPzTjhaodTF40PUGeN2fW95-XkfXqJzpxpElwd7xC9PcxeJ4_ZYjl_mowXmeW06DLpCmaVsNJyXhLjKgF9HAlSWFWV4FTFpIOqqJ0BYKVxTDhSEVmBclLamg3R3WF3E9uvLaROr32y0DQmQLtNulCcMiZoD-YH0MY2pQhOb6Jfm7jTlOi9Nt1r03tt-kdbX7g9LptkTeNib8en35YijNCS_oeNSlEywXrs5oB5APh7zZWkjLJvZ6eCOw</recordid><startdate>19860201</startdate><enddate>19860201</enddate><creator>Beneking, H.</creator><creator>Narozny, P.</creator><creator>Roentgen, P.</creator><creator>Yoshida, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19860201</creationdate><title>Enhanced carrier lifetime and diffusion length in GaAs by strained-layer MOCVD</title><author>Beneking, H. ; Narozny, P. ; Roentgen, P. ; Yoshida, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c412t-6f23c85c6c4490afb5e6c47502c8b9ef8b36feb2dfaee39af35f0b06be8f66cd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Applied sciences</topic><topic>Atomic layer deposition</topic><topic>Charge carrier lifetime</topic><topic>Charge carriers: generation, recombination, lifetime, and trapping</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity phenomena in semiconductors and insulators</topic><topic>Doping</topic><topic>Electronic transport in condensed matter</topic><topic>Epitaxial layers</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Lattices</topic><topic>MOCVD</topic><topic>Other techniques and industries</topic><topic>Physics</topic><topic>Schottky diodes</topic><topic>Semiconductor diodes</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Beneking, H.</creatorcontrib><creatorcontrib>Narozny, P.</creatorcontrib><creatorcontrib>Roentgen, P.</creatorcontrib><creatorcontrib>Yoshida, M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Beneking, H.</au><au>Narozny, P.</au><au>Roentgen, P.</au><au>Yoshida, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced carrier lifetime and diffusion length in GaAs by strained-layer MOCVD</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1986-02-01</date><risdate>1986</risdate><volume>7</volume><issue>2</issue><spage>101</spage><epage>103</epage><pages>101-103</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>It is shown that by MOCVD growth of a single strained GaAs:In layer, the quality of epitaxial GaAs material can be remarkably enhanced. This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. This technique permits an improvement of the quality of electronic and optoelectronic bipolar devices.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/EDL.1986.26308</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1986-02, Vol.7 (2), p.101-103 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_7959353 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Atomic layer deposition Charge carrier lifetime Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Doping Electronic transport in condensed matter Epitaxial layers Exact sciences and technology Gallium arsenide Lattices MOCVD Other techniques and industries Physics Schottky diodes Semiconductor diodes Substrates |
| title | Enhanced carrier lifetime and diffusion length in GaAs by strained-layer MOCVD |
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