Enhanced carrier lifetime and diffusion length in GaAs by strained-layer MOCVD

It is shown that by MOCVD growth of a single strained GaAs:In layer, the quality of epitaxial GaAs material can be remarkably enhanced. This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. This technique permits an improvement of the quality of electronic and op...

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Veröffentlicht in:	IEEE electron device letters 1986-02, Vol.7 (2), p.101-103
Hauptverfasser:	Beneking, H., Narozny, P., Roentgen, P., Yoshida, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Atomic layer deposition Charge carrier lifetime Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Doping Electronic transport in condensed matter Epitaxial layers Exact sciences and technology Gallium arsenide Lattices MOCVD Other techniques and industries Physics Schottky diodes Semiconductor diodes Substrates
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Beschreibung
Zusammenfassung:	It is shown that by MOCVD growth of a single strained GaAs:In layer, the quality of epitaxial GaAs material can be remarkably enhanced. This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. This technique permits an improvement of the quality of electronic and optoelectronic bipolar devices.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/EDL.1986.26308