Simulation of dry etch processes by COMPOSITE

Anetch simulator that allows modeling of dry etch processes by means of rates, fitting functions, and models is presented. Isotropic etching by chemically active neutrals, sputtering by energetic ions, and anisotropic etching by ion-induced chemistry can be considered. The simulation of secondary effects such as redeposition and trenching as well as polymerization effects is possible. Some applications are presented to demonstrate the possibilities of the new program. This etch simulator is part of the process modeling program COMPOSITE, which is able to simulate the complete fabrication process of integrated circuits.< >