Effects on InP surface trap states of in situ etching and phosphorus-nitride deposition

Effects on InP surface trap states of in situ etching and phosphorus-nitride deposition

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Veröffentlicht in:Journal of applied physics 1987-09, Vol.62 (6), p.2370-2375
Hauptverfasser: YOON-HA JEONG, TAKAGI, S, ARAI, F, SUGANO, T
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Sprache:eng ; jpn
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Applied sciences
Exact sciences and technology
Other techniques and industries
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container_issue 6
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container_title Journal of applied physics
container_volume 62
creator YOON-HA JEONG
TAKAGI, S
ARAI, F
SUGANO, T
description
doi_str_mv 10.1063/1.339501
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ispartof Journal of applied physics, 1987-09, Vol.62 (6), p.2370-2375
issn 0021-8979
1089-7550
language eng ; jpn
recordid cdi_pascalfrancis_primary_7845860
source AIP Digital Archive
subjects Applied sciences
Exact sciences and technology
Other techniques and industries
title Effects on InP surface trap states of in situ etching and phosphorus-nitride deposition
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