Electron beam pumped lasing in ZnSe/ZnSSe superlattice structures grown by molecular-beam epitaxy

We report the first operation of molecular-beam epitaxy (MBE) grown ZnSe/ZnS/sub x/Se/sub 1-//sub x/ superlattice electron beam pumped lasers in the temperature range 100--300 K and the first room-temperature operation of MBE grown ZnSe on GaAs transverse geometry electron beam pumped lasers. Thresh...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1987-10, Vol.62 (7), p.3071-3074
Hauptverfasser:	CAMMACK, D. A, DALBY, R. J, CORNELISSEN, H. J, KHURGIN, J
Format:	Artikel
Sprache:	eng
Schlagworte:	420300 - Engineering- Lasers- (-1989) CHALCOGENIDES CURRENT DENSITY CURRENTS DATA ELECTRIC CURRENTS ELECTRICAL PUMPING ELECTRON BEAM PUMPING ENGINEERING EPITAXY Exact sciences and technology EXPERIMENTAL DATA FABRICATION Fundamental areas of phenomenology (including applications) INFORMATION INORGANIC PHOSPHORS LASERS LOW TEMPERATURE MEDIUM TEMPERATURE MOLECULAR BEAM EPITAXY NUMERICAL DATA OPERATION Optics PHOSPHORS Physics PUMPING SELENIDES SELENIUM COMPOUNDS SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SULFIDES SULFUR COMPOUNDS SUPERLATTICES THRESHOLD CURRENT ZINC COMPOUNDS ZINC SELENIDES ZINC SULFIDES
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Zusammenfassung:	We report the first operation of molecular-beam epitaxy (MBE) grown ZnSe/ZnS/sub x/Se/sub 1-//sub x/ superlattice electron beam pumped lasers in the temperature range 100--300 K and the first room-temperature operation of MBE grown ZnSe on GaAs transverse geometry electron beam pumped lasers. Threshold current densities of 2.5 A/cm/sup 2/ at 100 K were achieved by both devices. At room temperature, threshold current was 5 A/cm/sup 2/ for the ZnSe devices and 12 A/cm/sup 2/ for the superlattice.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.339352