Comparative study of SiOx and SiOx:TbF3 films

The influence of doping with TbF3 and subsequent annealing on the properties of vacuum thermally deposited SiOx films is investigated. It is shown that: (i) in spite of the conservation of the amorphous structure and the rather weak dependence of x and the optical characteristics on these factors they influence strongly the secondary ion mass spectra, the conductivity, and other characteristics, which are sensitive to the SiOx matrix microstructure, (ii) there are the initial stages of the phase separation in the films which are suppressed by the doping and promoted by the annealing. A modified random‐bonding model taking into account local x‐fluctuations is considered. This model allows to explain the impurity influence on the Si–O network. The role of the microstructural rearrangements in the susceptibility to the electroluminescence is discussed. [Russian Text Ignored].