Effect of an Al overlayer on interface states in poly-Si gate MOS capacitors

The presence of an aluminum overlayer on the polysilicon gate of MOS capacitors was found to enhance the generation of interface states strongly by ionizing radiation and Fowler-Nordheim electron injection. The effect is eliminated by removal of the metal before, but not after, sintering. The reduct...

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Veröffentlicht in:	IEEE electron device letters 1989-07, Vol.10 (7), p.333-335
1. Verfasser:	Dunn, G.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Applied sciences Compound structure devices Contacts Electronics Exact sciences and technology Hydrogen Interface states Ionizing radiation MOS capacitors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sputter etching Sputtering Stress Wet etching
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Zusammenfassung:	The presence of an aluminum overlayer on the polysilicon gate of MOS capacitors was found to enhance the generation of interface states strongly by ionizing radiation and Fowler-Nordheim electron injection. The effect is eliminated by removal of the metal before, but not after, sintering. The reduction, during the sinter, of water-related species by the aluminum, producing atomic hydrogen, is suggested as the probable cause of this behavior.< >
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.29670