Thermally stimulated depolarization current controlled by surface charge change

The results of thermally stimulated polarization (TSPC) and depolarization (TSDC) current and triangle voltage sweep (TVS) measurements in AlSiO2Si are explained on the basis of a model which assumes apart from the mobile ionic charge the existence of a positive surface charge in the insulator lay...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1988-08, Vol.108 (2), p.625-630
Hauptverfasser: Salman, E. G., Vertoprakhov, V. N.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 630
container_issue 2
container_start_page 625
container_title Physica status solidi. A, Applied research
container_volume 108
creator Salman, E. G.
Vertoprakhov, V. N.
description The results of thermally stimulated polarization (TSPC) and depolarization (TSDC) current and triangle voltage sweep (TVS) measurements in AlSiO2Si are explained on the basis of a model which assumes apart from the mobile ionic charge the existence of a positive surface charge in the insulator layer located in the vicinity of the metal–silicon dioxide interface. The effect of this charge and its contribution to the TSDC are discussed. It is shown that from the TVS data it is possible to obtain the actual ionic charge density and a combined use of TVS and TSDC measurements allows estimation of the surface charge contribution to the instability of the MIS structures. [Russian Text Ignored].
doi_str_mv 10.1002/pssa.2211080218
format Article
fullrecord <record><control><sourceid>istex_pasca</sourceid><recordid>TN_cdi_pascalfrancis_primary_7316507</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_WNG_K9PHSS0C_S</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3188-dbbb6696fb85f75d0f4fedf765d53ab7e830042e84a707e36101ed41851f2b43</originalsourceid><addsrcrecordid>eNpFkE1Lw0AQhhdRsFbPXnPwmjqbzX4ET6VoKxZbSEFvyybZbaPbJOymaPz1plba08swzzsMD0K3GEYYILpvvFejKMIYBERYnKEBphEOScLez9EAgOBQJIxeoivvPwAgBg4DtFhttNsqa7vAt-V2Z1Wri6DQTW2VK39UW9ZVkO-c01Ub5HXVutransh6fueMynWQb5Rb_0W11tfowijr9c1_DtHq6XE1mYXzxfR5Mp6HOcFChEWWZYwlzGSCGk4LMLHRheGMFpSojGtB-g8jLWLFgWvCMGBdxFhQbKIsJkN0dzjbKJ8ra5yq8tLLxpVb5TrJCWYUeI89HLCv0uruuMYg98rkXpk8KZPLNB2fxr4dHtqlb_X3sa3cp2SccCrfXqfyJVnO0hQmMiW_ZdJzbw</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Thermally stimulated depolarization current controlled by surface charge change</title><source>Access via Wiley Online Library</source><creator>Salman, E. G. ; Vertoprakhov, V. N.</creator><creatorcontrib>Salman, E. G. ; Vertoprakhov, V. N.</creatorcontrib><description>The results of thermally stimulated polarization (TSPC) and depolarization (TSDC) current and triangle voltage sweep (TVS) measurements in AlSiO2Si are explained on the basis of a model which assumes apart from the mobile ionic charge the existence of a positive surface charge in the insulator layer located in the vicinity of the metal–silicon dioxide interface. The effect of this charge and its contribution to the TSDC are discussed. It is shown that from the TVS data it is possible to obtain the actual ionic charge density and a combined use of TVS and TSDC measurements allows estimation of the surface charge contribution to the instability of the MIS structures. [Russian Text Ignored].</description><identifier>ISSN: 0031-8965</identifier><identifier>EISSN: 1521-396X</identifier><identifier>DOI: 10.1002/pssa.2211080218</identifier><identifier>CODEN: PSSABA</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Applied sciences ; Compound structure devices ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Physica status solidi. A, Applied research, 1988-08, Vol.108 (2), p.625-630</ispartof><rights>Copyright © 1988 WILEY‐VCH Verlag GmbH &amp; Co. KGaA</rights><rights>1989 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3188-dbbb6696fb85f75d0f4fedf765d53ab7e830042e84a707e36101ed41851f2b43</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.2211080218$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.2211080218$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>315,781,785,1418,27925,27926,45575,45576</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=7316507$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Salman, E. G.</creatorcontrib><creatorcontrib>Vertoprakhov, V. N.</creatorcontrib><title>Thermally stimulated depolarization current controlled by surface charge change</title><title>Physica status solidi. A, Applied research</title><addtitle>phys. stat. sol. (a)</addtitle><description>The results of thermally stimulated polarization (TSPC) and depolarization (TSDC) current and triangle voltage sweep (TVS) measurements in AlSiO2Si are explained on the basis of a model which assumes apart from the mobile ionic charge the existence of a positive surface charge in the insulator layer located in the vicinity of the metal–silicon dioxide interface. The effect of this charge and its contribution to the TSDC are discussed. It is shown that from the TVS data it is possible to obtain the actual ionic charge density and a combined use of TVS and TSDC measurements allows estimation of the surface charge contribution to the instability of the MIS structures. [Russian Text Ignored].</description><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNpFkE1Lw0AQhhdRsFbPXnPwmjqbzX4ET6VoKxZbSEFvyybZbaPbJOymaPz1plba08swzzsMD0K3GEYYILpvvFejKMIYBERYnKEBphEOScLez9EAgOBQJIxeoivvPwAgBg4DtFhttNsqa7vAt-V2Z1Wri6DQTW2VK39UW9ZVkO-c01Ub5HXVutransh6fueMynWQb5Rb_0W11tfowijr9c1_DtHq6XE1mYXzxfR5Mp6HOcFChEWWZYwlzGSCGk4LMLHRheGMFpSojGtB-g8jLWLFgWvCMGBdxFhQbKIsJkN0dzjbKJ8ra5yq8tLLxpVb5TrJCWYUeI89HLCv0uruuMYg98rkXpk8KZPLNB2fxr4dHtqlb_X3sa3cp2SccCrfXqfyJVnO0hQmMiW_ZdJzbw</recordid><startdate>19880816</startdate><enddate>19880816</enddate><creator>Salman, E. G.</creator><creator>Vertoprakhov, V. N.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope></search><sort><creationdate>19880816</creationdate><title>Thermally stimulated depolarization current controlled by surface charge change</title><author>Salman, E. G. ; Vertoprakhov, V. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3188-dbbb6696fb85f75d0f4fedf765d53ab7e830042e84a707e36101ed41851f2b43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Applied sciences</topic><topic>Compound structure devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>online_resources</toplevel><creatorcontrib>Salman, E. G.</creatorcontrib><creatorcontrib>Vertoprakhov, V. N.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><jtitle>Physica status solidi. A, Applied research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Salman, E. G.</au><au>Vertoprakhov, V. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermally stimulated depolarization current controlled by surface charge change</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1988-08-16</date><risdate>1988</risdate><volume>108</volume><issue>2</issue><spage>625</spage><epage>630</epage><pages>625-630</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>The results of thermally stimulated polarization (TSPC) and depolarization (TSDC) current and triangle voltage sweep (TVS) measurements in AlSiO2Si are explained on the basis of a model which assumes apart from the mobile ionic charge the existence of a positive surface charge in the insulator layer located in the vicinity of the metal–silicon dioxide interface. The effect of this charge and its contribution to the TSDC are discussed. It is shown that from the TVS data it is possible to obtain the actual ionic charge density and a combined use of TVS and TSDC measurements allows estimation of the surface charge contribution to the instability of the MIS structures. [Russian Text Ignored].</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.2211080218</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0031-8965
ispartof Physica status solidi. A, Applied research, 1988-08, Vol.108 (2), p.625-630
issn 0031-8965
1521-396X
language eng
recordid cdi_pascalfrancis_primary_7316507
source Access via Wiley Online Library
subjects Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Thermally stimulated depolarization current controlled by surface charge change
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T14%3A35%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Thermally%20stimulated%20depolarization%20current%20controlled%20by%20surface%20charge%20change&rft.jtitle=Physica%20status%20solidi.%20A,%20Applied%20research&rft.au=Salman,%20E.%20G.&rft.date=1988-08-16&rft.volume=108&rft.issue=2&rft.spage=625&rft.epage=630&rft.pages=625-630&rft.issn=0031-8965&rft.eissn=1521-396X&rft.coden=PSSABA&rft_id=info:doi/10.1002/pssa.2211080218&rft_dat=%3Cistex_pasca%3Eark_67375_WNG_K9PHSS0C_S%3C/istex_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true