Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layers
Monolithic, high-speed planar, linear, parallel channel, ten-element GaAs detector-amplifier arrays with a 70- mu m detector center-to-center spacing have been fabricated using a GaAs-AlGaAs-GaAs epitaxial structure grown on semi-insulating GaAs. The AlGaAs layer provided excellent electrical isolat...
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| Veröffentlicht in: | IEEE electron device letters 1988-10, Vol.9 (10), p.550-552 |
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| container_title | IEEE electron device letters |
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| creator | Anderson, G.W. Papanicolaou, N.A. Ma, D.I. Mack, I.A.G. Modolo, J.A. Kub, F.J. Young, C.W. Thompson, P.E. Boos, J.B. |
| description | Monolithic, high-speed planar, linear, parallel channel, ten-element GaAs detector-amplifier arrays with a 70- mu m detector center-to-center spacing have been fabricated using a GaAs-AlGaAs-GaAs epitaxial structure grown on semi-insulating GaAs. The AlGaAs layer provided excellent electrical isolation between the transistor and n-type photoconductor epitaxial layers. Rise and fall times of integrated detector-amplifier array channels of 650 ps and 1.1 ns, respectively, were measured at 0.84- mu m wavelength. The sensitivity of single, discrete, detector-amplifier channels was better than -34 dBm.< > |
| doi_str_mv | 10.1109/55.17841 |
| format | Article |
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The AlGaAs layer provided excellent electrical isolation between the transistor and n-type photoconductor epitaxial layers. Rise and fall times of integrated detector-amplifier array channels of 650 ps and 1.1 ns, respectively, were measured at 0.84- mu m wavelength. The sensitivity of single, discrete, detector-amplifier channels was better than -34 dBm.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.17841</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acoustic signal detection ; Applied sciences ; Circuits ; Detectors ; Doping ; Electronics ; Exact sciences and technology ; FETs ; Gallium arsenide ; Gold ; Insulation ; Integrated circuits ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The AlGaAs layer provided excellent electrical isolation between the transistor and n-type photoconductor epitaxial layers. Rise and fall times of integrated detector-amplifier array channels of 650 ps and 1.1 ns, respectively, were measured at 0.84- mu m wavelength. The sensitivity of single, discrete, detector-amplifier channels was better than -34 dBm.< ></description><subject>Acoustic signal detection</subject><subject>Applied sciences</subject><subject>Circuits</subject><subject>Detectors</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Gallium arsenide</subject><subject>Gold</subject><subject>Insulation</subject><subject>Integrated circuits</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sensor arrays</subject><subject>Silicon</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNqN0U1rGzEQBmBRGoibFnLNTYcQcsgmGq0-Vkdj8gWB5pCel7F2tlGQ1660JvjUv17ZDukxOQ0Dz7wwM4wdg7gEEO5K60uwjYIvbAJaN5XQpv7KJsIqqGoQ5pB9y_lFCFDKqgn7-xhxwHTBYxgIE7_FaeYdjeTHZapwsYqhD5Q4poQb_hrGZ44DD0NeRxzD8JtP424kr9Bv24ibouc0vhINfHym97Ay1_Ex4ZBD3rY7mb-zgx5jph9v9Yj9url-mt1VDz9v72fTh8rXSkOlrajnsuwn0ZjGKqm8nyspUIIUQnQaXOdq66Uxfa-x86RqbXv0jXKd7aA-Ymf73FVa_llTHttFyJ5i2Z6W69zKxjlrpP4ELNdtTP0JqKV1Rn0MlVMAxhZ4voc-LXNO1LerFBaYNi2IdvvcVut299xCT98yMXuMfTmrD_ndW6mtA1fYyZ4FIvqftov4B8CFqyI</recordid><startdate>19881001</startdate><enddate>19881001</enddate><creator>Anderson, G.W.</creator><creator>Papanicolaou, N.A.</creator><creator>Ma, D.I.</creator><creator>Mack, I.A.G.</creator><creator>Modolo, J.A.</creator><creator>Kub, F.J.</creator><creator>Young, C.W.</creator><creator>Thompson, P.E.</creator><creator>Boos, J.B.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope><scope>7U5</scope></search><sort><creationdate>19881001</creationdate><title>Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layers</title><author>Anderson, G.W. ; Papanicolaou, N.A. ; Ma, D.I. ; Mack, I.A.G. ; Modolo, J.A. ; Kub, F.J. ; Young, C.W. ; Thompson, P.E. ; Boos, J.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3451-5703b21092a6687424ccb420a212000d519d937c266ff5adce4357fac849d7d13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Acoustic signal detection</topic><topic>Applied sciences</topic><topic>Circuits</topic><topic>Detectors</topic><topic>Doping</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>Gallium arsenide</topic><topic>Gold</topic><topic>Insulation</topic><topic>Integrated circuits</topic><topic>Semiconductor electronics. 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Solid state devices</topic><topic>Sensor arrays</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Anderson, G.W.</creatorcontrib><creatorcontrib>Papanicolaou, N.A.</creatorcontrib><creatorcontrib>Ma, D.I.</creatorcontrib><creatorcontrib>Mack, I.A.G.</creatorcontrib><creatorcontrib>Modolo, J.A.</creatorcontrib><creatorcontrib>Kub, F.J.</creatorcontrib><creatorcontrib>Young, C.W.</creatorcontrib><creatorcontrib>Thompson, P.E.</creatorcontrib><creatorcontrib>Boos, J.B.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Anderson, G.W.</au><au>Papanicolaou, N.A.</au><au>Ma, D.I.</au><au>Mack, I.A.G.</au><au>Modolo, J.A.</au><au>Kub, F.J.</au><au>Young, C.W.</au><au>Thompson, P.E.</au><au>Boos, J.B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layers</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1988-10-01</date><risdate>1988</risdate><volume>9</volume><issue>10</issue><spage>550</spage><epage>552</epage><pages>550-552</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Monolithic, high-speed planar, linear, parallel channel, ten-element GaAs detector-amplifier arrays with a 70- mu m detector center-to-center spacing have been fabricated using a GaAs-AlGaAs-GaAs epitaxial structure grown on semi-insulating GaAs. The AlGaAs layer provided excellent electrical isolation between the transistor and n-type photoconductor epitaxial layers. Rise and fall times of integrated detector-amplifier array channels of 650 ps and 1.1 ns, respectively, were measured at 0.84- mu m wavelength. The sensitivity of single, discrete, detector-amplifier channels was better than -34 dBm.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.17841</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1988-10, Vol.9 (10), p.550-552 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_7257919 |
| source | IEEE Electronic Library (IEL) |
| subjects | Acoustic signal detection Applied sciences Circuits Detectors Doping Electronics Exact sciences and technology FETs Gallium arsenide Gold Insulation Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensor arrays Silicon |
| title | Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layers |
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