Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layers

Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layers

Monolithic, high-speed planar, linear, parallel channel, ten-element GaAs detector-amplifier arrays with a 70- mu m detector center-to-center spacing have been fabricated using a GaAs-AlGaAs-GaAs epitaxial structure grown on semi-insulating GaAs. The AlGaAs layer provided excellent electrical isolat...

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Veröffentlicht in:IEEE electron device letters 1988-10, Vol.9 (10), p.550-552
Hauptverfasser: Anderson, G.W., Papanicolaou, N.A., Ma, D.I., Mack, I.A.G., Modolo, J.A., Kub, F.J., Young, C.W., Thompson, P.E., Boos, J.B.
Format: Artikel
Sprache:eng
Schlagworte:
Acoustic signal detection
Applied sciences
Circuits
Detectors
Doping
Electronics
Exact sciences and technology
FETs
Gallium arsenide
Gold
Insulation
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensor arrays
Silicon
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Zusammenfassung:Monolithic, high-speed planar, linear, parallel channel, ten-element GaAs detector-amplifier arrays with a 70- mu m detector center-to-center spacing have been fabricated using a GaAs-AlGaAs-GaAs epitaxial structure grown on semi-insulating GaAs. The AlGaAs layer provided excellent electrical isolation between the transistor and n-type photoconductor epitaxial layers. Rise and fall times of integrated detector-amplifier array channels of 650 ps and 1.1 ns, respectively, were measured at 0.84- mu m wavelength. The sensitivity of single, discrete, detector-amplifier channels was better than -34 dBm.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.17841