Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors

Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors

Long-wavelength infrared photodiodes were fabricated using InAs/sub 1-x/Sb/sub x//InSb (x=0.82-0.85) strained-layer superlattices (SLSs). These structures can be grown using either molecular-beam epitaxy or metalorganic chemical vapor deposition. These photodiodes display broad spectral responses up...

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Veröffentlicht in:IEEE electron device letters 1989-04, Vol.10 (4), p.150-152
Hauptverfasser: Kurtz, S.R., Dawson, L.R., Biefeld, R.M., Fritz, I.J., Zipperian, T.E.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Doping
Electromagnetic wave absorption
Electronics
Exact sciences and technology
Gallium arsenide
Infrared detectors
Laser sintering
Optoelectronic devices
Photodiodes
Photovoltaic systems
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solar power generation
Substrates
Superlattices
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Zusammenfassung:Long-wavelength infrared photodiodes were fabricated using InAs/sub 1-x/Sb/sub x//InSb (x=0.82-0.85) strained-layer superlattices (SLSs). These structures can be grown using either molecular-beam epitaxy or metalorganic chemical vapor deposition. These photodiodes display broad spectral responses up to wavelengths greater than or approximately equal to 10 mu m, and detectivities of 1*10/sup 9/ cm-Hz/sup 1/2//W at 10 mu m.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.31700