Nature of the electrical inactivity of tin and iron impurity atoms in In2Te3 and Ga2Te3

α‐In2Te3, ß‐In2Te3, and Ga2Te3 crystals doped with iron or tin are studied. Both, iron and tin are found in divalent states in ß‐In2Te3 and Ga2Te3 by Mössbauer spectroscopy. Their electrical inactivity is explained by a compensation effect of In+ or Ga+ ions which pins the Fermi level to the middle...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1988-05, Vol.107 (1), p.291-298
Hauptverfasser:	Nasredinov, F. S., Masterov, V. F., Saidov, Ch. S., Seregin, P. P., Troitskaya, N. N., Tschirner, H. U.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	α‐In2Te3, ß‐In2Te3, and Ga2Te3 crystals doped with iron or tin are studied. Both, iron and tin are found in divalent states in ß‐In2Te3 and Ga2Te3 by Mössbauer spectroscopy. Their electrical inactivity is explained by a compensation effect of In+ or Ga+ ions which pins the Fermi level to the middle of the energy gap. In α‐In2Te3 doped with iron or tin some impurity enriched regions which results in an additional conductivity at low temperature are found. [Russian Text Ignored]
ISSN:	0031-8965 1521-396X
DOI:	10.1002/pssa.2211070130