Suppression of hot-carrier effects in submicrometer surface-channel PMOSFETs

Suppression of hot-carrier effects in submicrometer surface-channel PMOSFETs

Hot-carrier-induced degradation in surface-channel (p-type polysilicon gate) PMOSFETs is investigated. Hot-electron-induced punchthrough is found to limit the lifetime of these devices. Although these surface-channel devices are observed to be more reliable than conventional buried-channel transisto...

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Veröffentlicht in:IEEE transactions on electron devices 1988-07, Vol.35 (7), p.1149-1151
Hauptverfasser: Brassington, M.P., Poulter, M.W., El-Diwany, M.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Capacitors
Electronics
Electrons
Equivalent circuits
Exact sciences and technology
Gallium arsenide
HEMTs
Hot carrier effects
Inductors
MODFET circuits
MOSFETs
Resistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Zusammenfassung:Hot-carrier-induced degradation in surface-channel (p-type polysilicon gate) PMOSFETs is investigated. Hot-electron-induced punchthrough is found to limit the lifetime of these devices. Although these surface-channel devices are observed to be more reliable than conventional buried-channel transistors, a lightly doped drain design is found to be necessary to provide adequate suppression of hot-carrier generation in 0.8- mu m-gate-length (L/sub eff/=0.5 mu m) transistors operated at 5 V.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.3379