Simulation of MOSFET lifetime under AC hot-electron stress
A substrate current model and a quasistatic hot-electron-induced MOSFET degradation model have been implemented using the Substrate Current And Lifetime Evaluator (SCALE) package. It is shown that quasistatic simulation is valid for a class of waveforms that includes those encountered in inverter-ba...
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Veröffentlicht in: | IEEE transactions on electron devices 1988-07, Vol.35 (7), p.1004-1011 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A substrate current model and a quasistatic hot-electron-induced MOSFET degradation model have been implemented using the Substrate Current And Lifetime Evaluator (SCALE) package. It is shown that quasistatic simulation is valid for a class of waveforms that includes those encountered in inverter-based logic circuits. The validity and limitations of the model are illustrated with experimental results. SCALE is linked to SPICE externally in a pre- and postprocessor fashion to form an independent simulator. The preprocessor interprets the input deck and requests SPICE to output the transient node voltages of the user-selected devices. The postprocessor then calculates the transient substrate current and makes a lifetime prediction.< > |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/16.3358 |