Simulation of MOSFET lifetime under AC hot-electron stress

A substrate current model and a quasistatic hot-electron-induced MOSFET degradation model have been implemented using the Substrate Current And Lifetime Evaluator (SCALE) package. It is shown that quasistatic simulation is valid for a class of waveforms that includes those encountered in inverter-ba...

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Veröffentlicht in:IEEE transactions on electron devices 1988-07, Vol.35 (7), p.1004-1011
Hauptverfasser: Kuo, M.M., Seki, K., Lee, P.M., Choi, J.Y., Ko, P.K., Hu, C.
Format: Artikel
Sprache:eng
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Zusammenfassung:A substrate current model and a quasistatic hot-electron-induced MOSFET degradation model have been implemented using the Substrate Current And Lifetime Evaluator (SCALE) package. It is shown that quasistatic simulation is valid for a class of waveforms that includes those encountered in inverter-based logic circuits. The validity and limitations of the model are illustrated with experimental results. SCALE is linked to SPICE externally in a pre- and postprocessor fashion to form an independent simulator. The preprocessor interprets the input deck and requests SPICE to output the transient node voltages of the user-selected devices. The postprocessor then calculates the transient substrate current and makes a lifetime prediction.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.3358