A new method to determine the MOSFET effective channel width

A new method to determine the MOSFET effective channel width

A method of determining the effective channel width of a MOSFET device that is simple and accurate is discussed. While simple, this method takes the width-dependent series resistance of MOSFETs into account, which has not been done in previous methods. The results correlate well with SEM cross secti...

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Veröffentlicht in:IEEE transactions on electron devices 1990-03, Vol.37 (3), p.811-814
Hauptverfasser: Arora, N.D., Bair, L.A., Richardson, L.M.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Bipolar transistors
Capacitance measurement
Capacitance-voltage characteristics
Electrical resistance measurement
Electronics
Exact sciences and technology
Gallium arsenide
Heterojunctions
Indium gallium arsenide
Indium phosphide
Molecular beam epitaxial growth
MOSFET circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Zusammenfassung:A method of determining the effective channel width of a MOSFET device that is simple and accurate is discussed. While simple, this method takes the width-dependent series resistance of MOSFETs into account, which has not been done in previous methods. The results correlate well with SEM cross section measurements. In addition, the method is applicable to current scaled MOSFETs, requiring no measurements outside the normal operating range of the devices being characterized.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.47793