Growth of SiO2 thin film by selective excitation photo-CVD using 123.6 nm VUV light
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Veröffentlicht in: | Japanese journal of applied physics 1988-11, Vol.27 (11), p.L2152-L2154 |
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container_end_page | L2154 |
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container_issue | 11 |
container_start_page | L2152 |
container_title | Japanese journal of applied physics |
container_volume | 27 |
creator | INOUE, K OKUYAMA, M HAMAKAWA, Y |
description | |
doi_str_mv | 10.1143/jjap.27.l2152 |
format | Article |
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fulltext | fulltext |
identifier | ISSN: 0021-4922 |
ispartof | Japanese journal of applied physics, 1988-11, Vol.27 (11), p.L2152-L2154 |
issn | 0021-4922 1347-4065 |
language | eng |
recordid | cdi_pascalfrancis_primary_6851896 |
source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
title | Growth of SiO2 thin film by selective excitation photo-CVD using 123.6 nm VUV light |
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