Growth of SiO2 thin film by selective excitation photo-CVD using 123.6 nm VUV light

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese journal of applied physics 1988-11, Vol.27 (11), p.L2152-L2154
Hauptverfasser: INOUE, K, OKUYAMA, M, HAMAKAWA, Y
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page L2154
container_issue 11
container_start_page L2152
container_title Japanese journal of applied physics
container_volume 27
creator INOUE, K
OKUYAMA, M
HAMAKAWA, Y
description
doi_str_mv 10.1143/jjap.27.l2152
format Article
fullrecord <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_6851896</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>6851896</sourcerecordid><originalsourceid>FETCH-LOGICAL-j277t-15efdead274b40efb0c3de5eb33e06deeb98e319ae938e96b8e7cb47cc90ad333</originalsourceid><addsrcrecordid>eNotzDtPwzAUQGELgUQpjOx3YE3wK3Y8ogIFqVKH0q6V7dw0jtIkis2j_75IMB19yyHkntGcMSke29aOOdd5x1nBL8iMCakzSVVxSWaUcpZJw_k1uYmx_aUqJJuRzXIavlMDQw2bsOaQmtBDHbojuBNE7NCn8IWAPz4km8LQw9gMacgWu2f4jKE_AOMiV9AfYbfdQRcOTbolV7XtIt79d062ry8fi7dstV6-L55WWcu1ThkrsK7QVlxLJynWjnpRYYFOCKSqQnSmRMGMRSNKNMqVqL2T2ntDbSWEmJOHv-9oo7ddPdneh7gfp3C002mvyoKVRokzM35Seg</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Growth of SiO2 thin film by selective excitation photo-CVD using 123.6 nm VUV light</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>INOUE, K ; OKUYAMA, M ; HAMAKAWA, Y</creator><creatorcontrib>INOUE, K ; OKUYAMA, M ; HAMAKAWA, Y</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.27.l2152</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Japanese journal of applied physics, 1988-11, Vol.27 (11), p.L2152-L2154</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,780,784,789,790,23930,23931,25140,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=6851896$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>INOUE, K</creatorcontrib><creatorcontrib>OKUYAMA, M</creatorcontrib><creatorcontrib>HAMAKAWA, Y</creatorcontrib><title>Growth of SiO2 thin film by selective excitation photo-CVD using 123.6 nm VUV light</title><title>Japanese journal of applied physics</title><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNotzDtPwzAUQGELgUQpjOx3YE3wK3Y8ogIFqVKH0q6V7dw0jtIkis2j_75IMB19yyHkntGcMSke29aOOdd5x1nBL8iMCakzSVVxSWaUcpZJw_k1uYmx_aUqJJuRzXIavlMDQw2bsOaQmtBDHbojuBNE7NCn8IWAPz4km8LQw9gMacgWu2f4jKE_AOMiV9AfYbfdQRcOTbolV7XtIt79d062ry8fi7dstV6-L55WWcu1ThkrsK7QVlxLJynWjnpRYYFOCKSqQnSmRMGMRSNKNMqVqL2T2ntDbSWEmJOHv-9oo7ddPdneh7gfp3C002mvyoKVRokzM35Seg</recordid><startdate>19881101</startdate><enddate>19881101</enddate><creator>INOUE, K</creator><creator>OKUYAMA, M</creator><creator>HAMAKAWA, Y</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope></search><sort><creationdate>19881101</creationdate><title>Growth of SiO2 thin film by selective excitation photo-CVD using 123.6 nm VUV light</title><author>INOUE, K ; OKUYAMA, M ; HAMAKAWA, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j277t-15efdead274b40efb0c3de5eb33e06deeb98e319ae938e96b8e7cb47cc90ad333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>INOUE, K</creatorcontrib><creatorcontrib>OKUYAMA, M</creatorcontrib><creatorcontrib>HAMAKAWA, Y</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Japanese journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>INOUE, K</au><au>OKUYAMA, M</au><au>HAMAKAWA, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of SiO2 thin film by selective excitation photo-CVD using 123.6 nm VUV light</atitle><jtitle>Japanese journal of applied physics</jtitle><date>1988-11-01</date><risdate>1988</risdate><volume>27</volume><issue>11</issue><spage>L2152</spage><epage>L2154</epage><pages>L2152-L2154</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.27.l2152</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese journal of applied physics, 1988-11, Vol.27 (11), p.L2152-L2154
issn 0021-4922
1347-4065
language eng
recordid cdi_pascalfrancis_primary_6851896
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Growth of SiO2 thin film by selective excitation photo-CVD using 123.6 nm VUV light
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T15%3A37%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20SiO2%20thin%20film%20by%20selective%20excitation%20photo-CVD%20using%20123.6%20nm%20VUV%20light&rft.jtitle=Japanese%20journal%20of%20applied%20physics&rft.au=INOUE,%20K&rft.date=1988-11-01&rft.volume=27&rft.issue=11&rft.spage=L2152&rft.epage=L2154&rft.pages=L2152-L2154&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.27.l2152&rft_dat=%3Cpascalfrancis%3E6851896%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true