Electron and hole traps in SiO2 films thermally grown on Si substrates in ultra-dry oxygen

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 1988-12, Vol.35 (12), p.2245-2252
Hauptverfasser:	MIKI, H, NOGUCHI, M, YOKOGAWA, K, BO-WOO KIM, ASADA, K, SUGANO, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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