Electron and hole traps in SiO2 films thermally grown on Si substrates in ultra-dry oxygen

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 1988-12, Vol.35 (12), p.2245-2252
Hauptverfasser:	MIKI, H, NOGUCHI, M, YOKOGAWA, K, BO-WOO KIM, ASADA, K, SUGANO, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	2252
container_issue	12
container_start_page	2245
container_title	IEEE transactions on electron devices
container_volume	35
creator	MIKI, H NOGUCHI, M YOKOGAWA, K BO-WOO KIM ASADA, K SUGANO, T
description
doi_str_mv	10.1109/16.8799
format	Article
fullrecord	<record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_6791310</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>6791310</sourcerecordid><originalsourceid>FETCH-LOGICAL-p182t-d5519a1b3bf7ce6cbeb398bd59ddf3767110ca4ca6ceeeab526a9923229e91fe3</originalsourceid><addsrcrecordid>eNotj8tOwzAURC0EEqEgfsELti6xnTi5S1QVilSpC2DDprp2btog5yE7FeTvCY_VzGiORhrGbmW6lDKFe2mWZQFwxhKZ54UAk5lzlqSpLAXoUl-yqxg_5miyTCXsfe3JjaHvOHYVP_ae-BhwiLzp-EuzU7xufBv5eKTQovcTP4T-s-P9T8vjycaZHukXP_nZiypMvP-aDtRds4safaSbf12wt8f162ojtrun59XDVgyyVKOo8lwCSqttXTgyzpLVUNoqh6qqdWGK-ZXDzKFxRIQ2VwYBlFYKCGRNesHu_nYHjA59HbBzTdwPoWkxTHtTgNQy1d-Z51SA</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electron and hole traps in SiO2 films thermally grown on Si substrates in ultra-dry oxygen</title><source>IEEE Electronic Library (IEL)</source><creator>MIKI, H ; NOGUCHI, M ; YOKOGAWA, K ; BO-WOO KIM ; ASADA, K ; SUGANO, T</creator><creatorcontrib>MIKI, H ; NOGUCHI, M ; YOKOGAWA, K ; BO-WOO KIM ; ASADA, K ; SUGANO, T</creatorcontrib><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.8799</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Physics</subject><ispartof>IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2245-2252</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6791310$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>MIKI, H</creatorcontrib><creatorcontrib>NOGUCHI, M</creatorcontrib><creatorcontrib>YOKOGAWA, K</creatorcontrib><creatorcontrib>BO-WOO KIM</creatorcontrib><creatorcontrib>ASADA, K</creatorcontrib><creatorcontrib>SUGANO, T</creatorcontrib><title>Electron and hole traps in SiO2 films thermally grown on Si substrates in ultra-dry oxygen</title><title>IEEE transactions on electron devices</title><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNotj8tOwzAURC0EEqEgfsELti6xnTi5S1QVilSpC2DDprp2btog5yE7FeTvCY_VzGiORhrGbmW6lDKFe2mWZQFwxhKZ54UAk5lzlqSpLAXoUl-yqxg_5miyTCXsfe3JjaHvOHYVP_ae-BhwiLzp-EuzU7xufBv5eKTQovcTP4T-s-P9T8vjycaZHukXP_nZiypMvP-aDtRds4safaSbf12wt8f162ojtrun59XDVgyyVKOo8lwCSqttXTgyzpLVUNoqh6qqdWGK-ZXDzKFxRIQ2VwYBlFYKCGRNesHu_nYHjA59HbBzTdwPoWkxTHtTgNQy1d-Z51SA</recordid><startdate>19881201</startdate><enddate>19881201</enddate><creator>MIKI, H</creator><creator>NOGUCHI, M</creator><creator>YOKOGAWA, K</creator><creator>BO-WOO KIM</creator><creator>ASADA, K</creator><creator>SUGANO, T</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>19881201</creationdate><title>Electron and hole traps in SiO2 films thermally grown on Si substrates in ultra-dry oxygen</title><author>MIKI, H ; NOGUCHI, M ; YOKOGAWA, K ; BO-WOO KIM ; ASADA, K ; SUGANO, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p182t-d5519a1b3bf7ce6cbeb398bd59ddf3767110ca4ca6ceeeab526a9923229e91fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MIKI, H</creatorcontrib><creatorcontrib>NOGUCHI, M</creatorcontrib><creatorcontrib>YOKOGAWA, K</creatorcontrib><creatorcontrib>BO-WOO KIM</creatorcontrib><creatorcontrib>ASADA, K</creatorcontrib><creatorcontrib>SUGANO, T</creatorcontrib><collection>Pascal-Francis</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MIKI, H</au><au>NOGUCHI, M</au><au>YOKOGAWA, K</au><au>BO-WOO KIM</au><au>ASADA, K</au><au>SUGANO, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron and hole traps in SiO2 films thermally grown on Si substrates in ultra-dry oxygen</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>1988-12-01</date><risdate>1988</risdate><volume>35</volume><issue>12</issue><spage>2245</spage><epage>2252</epage><pages>2245-2252</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/16.8799</doi><tpages>8</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0018-9383
ispartof	IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2245-2252
issn	0018-9383 1557-9646
language	eng
recordid	cdi_pascalfrancis_primary_6791310
source	IEEE Electronic Library (IEL)
subjects	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics
title	Electron and hole traps in SiO2 films thermally grown on Si substrates in ultra-dry oxygen
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T18%3A57%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electron%20and%20hole%20traps%20in%20SiO2%20films%20thermally%20grown%20on%20Si%20substrates%20in%20ultra-dry%20oxygen&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=MIKI,%20H&rft.date=1988-12-01&rft.volume=35&rft.issue=12&rft.spage=2245&rft.epage=2252&rft.pages=2245-2252&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/16.8799&rft_dat=%3Cpascalfrancis%3E6791310%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true