Cathodoluminescence in doped CdP2 and CdSiP2 crystals

Some general features of the behaviour of Cu, Zn, Bi, and Mn impurities in CdSiP2 and CdP2 crystals are studied by analyzing electron beam‐excited luminescence spectra measured in a temperature range of 6 to 300 K, as well as by determining their electrical parameters. The impurities are established to substitute mainly the cadmium in the crystalline lattice and to promote the formation of complexes of defects, which are radiative recombination centers. Cadmium vacancies as well participate in the defect complex formation processes. A radiation ascribed to interstitial cadmium‐type defects, is discovered in CdSiP2 crystals. [Russian Text Ignored].