The effect of electron radiation on thermal and electrophysical properties of n-InP

The insertion and annealing of radiation‐induced defects in n‐InP crystals irradiated with 50 MeV electrons are investigated by measuring the thermal conductivity (ϰ), the electrical conductivity (ϰ), and the Hall effect (RH). It is shown that in n‐InP crystals additionally to point defects (isolate...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1989-05, Vol.113 (1), p.43-50
Hauptverfasser:	Nikogosyan, S. K., Saakyan, V. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
Online-Zugang:	Volltext
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