The effect of electron radiation on thermal and electrophysical properties of n-InP

The insertion and annealing of radiation‐induced defects in n‐InP crystals irradiated with 50 MeV electrons are investigated by measuring the thermal conductivity (ϰ), the electrical conductivity (ϰ), and the Hall effect (RH). It is shown that in n‐InP crystals additionally to point defects (isolate...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1989-05, Vol.113 (1), p.43-50
Hauptverfasser:	Nikogosyan, S. K., Saakyan, V. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
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Zusammenfassung:	The insertion and annealing of radiation‐induced defects in n‐InP crystals irradiated with 50 MeV electrons are investigated by measuring the thermal conductivity (ϰ), the electrical conductivity (ϰ), and the Hall effect (RH). It is shown that in n‐InP crystals additionally to point defects (isolated defects, as well as complexes with impurities) also some complex defects (disordered regions) arise which are annealed at T > 300 °C. The presence of complexes and disordered regions is responsible for the anomalous behaviour of the temperature dependence of electrical conductivity and Hall mobility. [Russian Text Ignore]
ISSN:	0031-8965 1521-396X
DOI:	10.1002/pssa.2211130105