A Kinetic investigation of cluster formation in semiconductors at elevated temperatures

A complete modelling of the formation of point defect clusters in solid should include not only the thermodynamic, but also the kinetic aspect. A simple model is presented which describes quantitatively the non‐trivial diffusion process of point defects to the growing cluster. It is applied to the f...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1988-08, Vol.108 (2), p.519-528
Hauptverfasser:	Schnittler, Ch, Teichmann, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Physics Point defects (vacancies, interstitials, color centers, etc.) and defect clusters Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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